Impact Produced by Recrystallization of Mechanically Destroyed Layer on Planar Side of Silicon Wafer Upon Electrical Parameters of CMOS Microcircuits
The influence of recrystallization of a mechanically damaged layer on the working side of a silicon wafer using rapid heat treatment (1000 °C, 20 s) on the electrical parameters of complementary metal-oxide-semiconductor microcircuits has been established. The analyzed characteristics of n- and p-...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2024-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/3927 |
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| Summary: | The influence of recrystallization of a mechanically damaged layer on the working side of a silicon wafer using rapid heat treatment (1000 °C, 20 s) on the electrical parameters of complementary metal-oxide-semiconductor microcircuits has been established. The analyzed characteristics of n- and p-channel transistors were selected: drain current from the gate voltage when diode-connected; output characteristics at various gate voltages; drain current from the drain voltage without applying potential to the gate; percentage of yield of suitable products. These parameters were compared with microcircuits manufactured using standard technology. Analysis of the results showed that rapid thermal treatment of the original silicon wafers can significantly improve the above characteristics of n-channel metal-oxide-semiconductor ( n-MOS) and p-channel metal-oxide-semiconductor (p-MOS) transistors by reducing the fixed charge in gate dielectric obtained by pyrogenic oxidation of silicon. This makes it possible to improve the quality of manufactured complementary metal-oxide-semiconductor microcircuits and increase the percentage of yield of suitable products from 74.38 to 77.53 %. |
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| ISSN: | 1729-7648 |