Optically Integrated InP–Si$_3$ N$_4$ Hybrid Laser

Optically Integrated InP–Si$_3$ N$_4$ Hybrid Laser

We describe the first demonstration and characterization of an optically integrated InP&#x2013;Si<inline-formula> <tex-math notation="LaTeX">$_3$</tex-math></inline-formula>N<inline-formula><tex-math notation="LaTeX">$_4$</tex-math> &...

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Bibliographic Details
Main Authors: Youwen Fan, Jorn P. Epping, Ruud M. Oldenbeuving, Chris G. H. Roeloffzen, Marcel Hoekman, Ronald Dekker, Rene G. Heideman, Peter J. M. van der Slot, Klaus-J. Boller
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
Subjects:
Tunable lasers
semiconductor lasers
waveguide devices.
Online Access:https://ieeexplore.ieee.org/document/7763783/
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Summary:We describe the first demonstration and characterization of an optically integrated InP&#x2013;Si<inline-formula> <tex-math notation="LaTeX">$_3$</tex-math></inline-formula>N<inline-formula><tex-math notation="LaTeX">$_4$</tex-math> </inline-formula> hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a Si<inline-formula><tex-math notation="LaTeX">$_3$</tex-math></inline-formula>N<inline-formula> <tex-math notation="LaTeX">$_4$</tex-math></inline-formula> based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43&#x00A0;nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35&#x00A0;dB. The narrowest linewidth achieved is about 90&#x00A0;kHz, and the relative intensity noise is less than <inline-formula><tex-math notation="LaTeX">$-$</tex-math></inline-formula>135&#x00A0;dBc/Hz.
ISSN:1943-0655

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