Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs
This paper theoretically explores photocontrolled terahertz amplified modulator in electron plasma wave optically switched resonant tunneling diode (ORTD) gate high-electron mobility transistor. We present a developed distributed circuit model based on the Khmyrova model. Photoexcitation causes ORTD...
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IEEE
2017-01-01
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Online Access: | https://ieeexplore.ieee.org/document/8038781/ |
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author | Changju Zhu Luhong Mao Fan Zhao Xurui Mao Weilian Guo |
author_facet | Changju Zhu Luhong Mao Fan Zhao Xurui Mao Weilian Guo |
author_sort | Changju Zhu |
collection | DOAJ |
description | This paper theoretically explores photocontrolled terahertz amplified modulator in electron plasma wave optically switched resonant tunneling diode (ORTD) gate high-electron mobility transistor. We present a developed distributed circuit model based on the Khmyrova model. Photoexcitation causes ORTD operating state between negative differential conductivity and positive differential conductivity, which power gain of the device can be control by photoexcitation. Numerical and analytical results show that photoexcitation enabling amplified modulator can realize much larger modulation depth (<monospace>></monospace>95%) than what has been reported in photocontrolled modulator. Our results show the potential of this device in several fields of terahertz technology, such as photocontrolled modulator, mixer, and other two port networks. |
format | Article |
id | doaj-art-af55a8b8729043daab4d9c46fef6ee8d |
institution | Matheson Library |
issn | 1943-0655 |
language | English |
publishDate | 2017-01-01 |
publisher | IEEE |
record_format | Article |
series | IEEE Photonics Journal |
spelling | doaj-art-af55a8b8729043daab4d9c46fef6ee8d2025-07-01T23:34:19ZengIEEEIEEE Photonics Journal1943-06552017-01-01951810.1109/JPHOT.2017.27528418038781Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTsChangju Zhu0Luhong Mao1Fan Zhao2Xurui Mao3Weilian Guo4School of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaThis paper theoretically explores photocontrolled terahertz amplified modulator in electron plasma wave optically switched resonant tunneling diode (ORTD) gate high-electron mobility transistor. We present a developed distributed circuit model based on the Khmyrova model. Photoexcitation causes ORTD operating state between negative differential conductivity and positive differential conductivity, which power gain of the device can be control by photoexcitation. Numerical and analytical results show that photoexcitation enabling amplified modulator can realize much larger modulation depth (<monospace>></monospace>95%) than what has been reported in photocontrolled modulator. Our results show the potential of this device in several fields of terahertz technology, such as photocontrolled modulator, mixer, and other two port networks.https://ieeexplore.ieee.org/document/8038781/Optically switched resonant tunneling diode (ORTD)high-electron mobility transistor (HEMT)photo-controlledamplified modulator |
spellingShingle | Changju Zhu Luhong Mao Fan Zhao Xurui Mao Weilian Guo Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs IEEE Photonics Journal Optically switched resonant tunneling diode (ORTD) high-electron mobility transistor (HEMT) photo-controlled amplified modulator |
title | Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs |
title_full | Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs |
title_fullStr | Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs |
title_full_unstemmed | Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs |
title_short | Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs |
title_sort | photocontrolled terahertz amplified modulator via plasma wave excitation in ortd gated hemts |
topic | Optically switched resonant tunneling diode (ORTD) high-electron mobility transistor (HEMT) photo-controlled amplified modulator |
url | https://ieeexplore.ieee.org/document/8038781/ |
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