Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs

This paper theoretically explores photocontrolled terahertz amplified modulator in electron plasma wave optically switched resonant tunneling diode (ORTD) gate high-electron mobility transistor. We present a developed distributed circuit model based on the Khmyrova model. Photoexcitation causes ORTD...

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Main Authors: Changju Zhu, Luhong Mao, Fan Zhao, Xurui Mao, Weilian Guo
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8038781/
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author Changju Zhu
Luhong Mao
Fan Zhao
Xurui Mao
Weilian Guo
author_facet Changju Zhu
Luhong Mao
Fan Zhao
Xurui Mao
Weilian Guo
author_sort Changju Zhu
collection DOAJ
description This paper theoretically explores photocontrolled terahertz amplified modulator in electron plasma wave optically switched resonant tunneling diode (ORTD) gate high-electron mobility transistor. We present a developed distributed circuit model based on the Khmyrova model. Photoexcitation causes ORTD operating state between negative differential conductivity and positive differential conductivity, which power gain of the device can be control by photoexcitation. Numerical and analytical results show that photoexcitation enabling amplified modulator can realize much larger modulation depth (<monospace>&#x003E;</monospace>95&#x0025;) than what has been reported in photocontrolled modulator. Our results show the potential of this device in several fields of terahertz technology, such as photocontrolled modulator, mixer, and other two port networks.
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institution Matheson Library
issn 1943-0655
language English
publishDate 2017-01-01
publisher IEEE
record_format Article
series IEEE Photonics Journal
spelling doaj-art-af55a8b8729043daab4d9c46fef6ee8d2025-07-01T23:34:19ZengIEEEIEEE Photonics Journal1943-06552017-01-01951810.1109/JPHOT.2017.27528418038781Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTsChangju Zhu0Luhong Mao1Fan Zhao2Xurui Mao3Weilian Guo4School of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaThis paper theoretically explores photocontrolled terahertz amplified modulator in electron plasma wave optically switched resonant tunneling diode (ORTD) gate high-electron mobility transistor. We present a developed distributed circuit model based on the Khmyrova model. Photoexcitation causes ORTD operating state between negative differential conductivity and positive differential conductivity, which power gain of the device can be control by photoexcitation. Numerical and analytical results show that photoexcitation enabling amplified modulator can realize much larger modulation depth (<monospace>&#x003E;</monospace>95&#x0025;) than what has been reported in photocontrolled modulator. Our results show the potential of this device in several fields of terahertz technology, such as photocontrolled modulator, mixer, and other two port networks.https://ieeexplore.ieee.org/document/8038781/Optically switched resonant tunneling diode (ORTD)high-electron mobility transistor (HEMT)photo-controlledamplified modulator
spellingShingle Changju Zhu
Luhong Mao
Fan Zhao
Xurui Mao
Weilian Guo
Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs
IEEE Photonics Journal
Optically switched resonant tunneling diode (ORTD)
high-electron mobility transistor (HEMT)
photo-controlled
amplified modulator
title Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs
title_full Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs
title_fullStr Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs
title_full_unstemmed Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs
title_short Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs
title_sort photocontrolled terahertz amplified modulator via plasma wave excitation in ortd gated hemts
topic Optically switched resonant tunneling diode (ORTD)
high-electron mobility transistor (HEMT)
photo-controlled
amplified modulator
url https://ieeexplore.ieee.org/document/8038781/
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AT luhongmao photocontrolledterahertzamplifiedmodulatorviaplasmawaveexcitationinortdgatedhemts
AT fanzhao photocontrolledterahertzamplifiedmodulatorviaplasmawaveexcitationinortdgatedhemts
AT xuruimao photocontrolledterahertzamplifiedmodulatorviaplasmawaveexcitationinortdgatedhemts
AT weilianguo photocontrolledterahertzamplifiedmodulatorviaplasmawaveexcitationinortdgatedhemts