Maximizing the performance of FTO/GO/FASnI3/Cu solar cells: Advanced analysis using SCAPS-1D achieving an efficiency of 20.63%
In this investigation, a numerical modeling was developed out using SCAPS-1D to optimize produvtivity levels of a perovskite photovoltaic (PV) cell device utilizing Formamidinium tin Iodide as an active layer (FASnI3; FA=CH(NH2)2) with graphene oxide (GO) serving as the buffer layer. The exceptional...
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Elsevier
2025-12-01
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Online Access: | http://www.sciencedirect.com/science/article/pii/S2666950125000975 |
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author | Lhouceine Moulaoui Abdelhafid Najim Abdelmounaim Laassouli Bouzid Manaut Anass Bakour Youssef Lachtioui Khalid Rahmani Omar Bajjou |
author_facet | Lhouceine Moulaoui Abdelhafid Najim Abdelmounaim Laassouli Bouzid Manaut Anass Bakour Youssef Lachtioui Khalid Rahmani Omar Bajjou |
author_sort | Lhouceine Moulaoui |
collection | DOAJ |
description | In this investigation, a numerical modeling was developed out using SCAPS-1D to optimize produvtivity levels of a perovskite photovoltaic (PV) cell device utilizing Formamidinium tin Iodide as an active layer (FASnI3; FA=CH(NH2)2) with graphene oxide (GO) serving as the buffer layer. The exceptional electronic and optical characteristics resulted in a notable enhancement of the performance of hybrid organic–inorganic halide perovskite. This paper aims to examine various parameters that influence the effectiveness of the PV cell, including the layers thickness of the absorber (FASnI3) and the GO buffer, the temperature effects, defect density for the GO/FASnI3 interface, and the resistance Rs in series and in shunt RSH. The FTO/FASnI3/GO/Cu configuration achieves peak performance with an open circuit voltage (VOC) of 1.044 V, a short circuit current (JSC) of 28.69 mA·cm-2, a fill factor (FF) of 68.88 % and a power conversion efficiency (PCE) of 20.63 %. The optimization of this device parameters, allows to suggest the possibility of synthesizing an efficient lead-free FASnI3-based PV cell. |
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issn | 2666-9501 |
language | English |
publishDate | 2025-12-01 |
publisher | Elsevier |
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series | Results in Optics |
spelling | doaj-art-ab7fcfd1bd1e4a9498b38e1c2a9e09d22025-07-23T05:25:13ZengElsevierResults in Optics2666-95012025-12-0121100869Maximizing the performance of FTO/GO/FASnI3/Cu solar cells: Advanced analysis using SCAPS-1D achieving an efficiency of 20.63%Lhouceine Moulaoui0Abdelhafid Najim1Abdelmounaim Laassouli2Bouzid Manaut3Anass Bakour4Youssef Lachtioui5Khalid Rahmani6Omar Bajjou7LRPSI, Faculty of Polydisciplinary, Sultan Moulay Slimane University, B.P 592, 23000 Beni Mellal, MoroccoLaboratory of Engineering in Chemistry and Physics of Matter (LIPCM), Faculty of Sciences and Technics, Sultan Moulay Slimane University, B.P 523, 23000 Beni Mellal, MoroccoLaboratory of Engineering in Chemistry and Physics of Matter (LIPCM), Faculty of Sciences and Technics, Sultan Moulay Slimane University, B.P 523, 23000 Beni Mellal, MoroccoLRPSI, Faculty of Polydisciplinary, Sultan Moulay Slimane University, B.P 592, 23000 Beni Mellal, MoroccoLaboratory of Materials, Energy and System Control, Faculty of Sciences and Technics, Hassan II University of Casablanca, 146 Mohammedia, MoroccoLaboratory of Engineering in Chemistry and Physics of Matter (LIPCM), Faculty of Sciences and Technics, Sultan Moulay Slimane University, B.P 523, 23000 Beni Mellal, MoroccoPSES, ERC, Ecole Normale Supérieure, Mohammed V University in Rabat, P. O. Box: BP 5118, Takkadoum, Rabat 10000, MoroccoLaboratory of Engineering in Chemistry and Physics of Matter (LIPCM), Faculty of Sciences and Technics, Sultan Moulay Slimane University, B.P 523, 23000 Beni Mellal, MoroccoIn this investigation, a numerical modeling was developed out using SCAPS-1D to optimize produvtivity levels of a perovskite photovoltaic (PV) cell device utilizing Formamidinium tin Iodide as an active layer (FASnI3; FA=CH(NH2)2) with graphene oxide (GO) serving as the buffer layer. The exceptional electronic and optical characteristics resulted in a notable enhancement of the performance of hybrid organic–inorganic halide perovskite. This paper aims to examine various parameters that influence the effectiveness of the PV cell, including the layers thickness of the absorber (FASnI3) and the GO buffer, the temperature effects, defect density for the GO/FASnI3 interface, and the resistance Rs in series and in shunt RSH. The FTO/FASnI3/GO/Cu configuration achieves peak performance with an open circuit voltage (VOC) of 1.044 V, a short circuit current (JSC) of 28.69 mA·cm-2, a fill factor (FF) of 68.88 % and a power conversion efficiency (PCE) of 20.63 %. The optimization of this device parameters, allows to suggest the possibility of synthesizing an efficient lead-free FASnI3-based PV cell.http://www.sciencedirect.com/science/article/pii/S2666950125000975PV cellFASnI3JSCVOCFFPCE |
spellingShingle | Lhouceine Moulaoui Abdelhafid Najim Abdelmounaim Laassouli Bouzid Manaut Anass Bakour Youssef Lachtioui Khalid Rahmani Omar Bajjou Maximizing the performance of FTO/GO/FASnI3/Cu solar cells: Advanced analysis using SCAPS-1D achieving an efficiency of 20.63% Results in Optics PV cell FASnI3 JSC VOC FF PCE |
title | Maximizing the performance of FTO/GO/FASnI3/Cu solar cells: Advanced analysis using SCAPS-1D achieving an efficiency of 20.63% |
title_full | Maximizing the performance of FTO/GO/FASnI3/Cu solar cells: Advanced analysis using SCAPS-1D achieving an efficiency of 20.63% |
title_fullStr | Maximizing the performance of FTO/GO/FASnI3/Cu solar cells: Advanced analysis using SCAPS-1D achieving an efficiency of 20.63% |
title_full_unstemmed | Maximizing the performance of FTO/GO/FASnI3/Cu solar cells: Advanced analysis using SCAPS-1D achieving an efficiency of 20.63% |
title_short | Maximizing the performance of FTO/GO/FASnI3/Cu solar cells: Advanced analysis using SCAPS-1D achieving an efficiency of 20.63% |
title_sort | maximizing the performance of fto go fasni3 cu solar cells advanced analysis using scaps 1d achieving an efficiency of 20 63 |
topic | PV cell FASnI3 JSC VOC FF PCE |
url | http://www.sciencedirect.com/science/article/pii/S2666950125000975 |
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