THE INFLUENCE OF THE THERMAL REDUCTION TEMPERATURE ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF REDUCED GRAPHENE OXIDE FILMS
Introduction. An incomplete list of graphene properties includes high electric conductivity, thermal conductivity, strength, large surface area, high light transmittance. Graphene is a very promising material from the point of view of its application in micro- and nanoelectronics. In addition, graph...
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Saint Petersburg Electrotechnical University "LETI"
2019-07-01
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| Series: | Известия высших учебных заведений России: Радиоэлектроника |
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| Online Access: | https://re.eltech.ru/jour/article/view/327 |
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| author | Denis Yu. Kornilov |
| author_facet | Denis Yu. Kornilov |
| author_sort | Denis Yu. Kornilov |
| collection | DOAJ |
| description | Introduction. An incomplete list of graphene properties includes high electric conductivity, thermal conductivity, strength, large surface area, high light transmittance. Graphene is a very promising material from the point of view of its application in micro- and nanoelectronics. In addition, graphene advantage is a possibility of its obtaining by various ways. It allows creating materials with desired physicochemical properties by using appropriate technological methods. Objective. The investigation of a thermal reduction temperature influence on physicochemical properties of graphene oxide (GO) films. Materials and methods. In the present work, GO films are obtained on a slide surface by its immersing and removing from a graphene oxide water dispersion (dip coating). Obtained samples are studied by methods of scanning electron microscopy, Raman spectroscopy, and elemental CHN analysis. A sheet resistance is measured by a four-point probes method. Results. A content difference of elements (C, H, N) in studied samples, and both graphene structure defectiveness and sheet resistance decrease, are found to be proportional to a reduction temperature increase. A GO films thickness decrease during a heat treatment is also observed, which is presumably associated with a functional GO groups loss while thermal reduction. Conclusion. Research results demonstrate a possibility of a carbon films with desired physicochemical properties obtaining from a reduced graphene oxide (RGO), which can be used in thin-film technologies. Presented materials can also be useful in issues related to GO and RGO obtaining and applying. |
| format | Article |
| id | doaj-art-a80b3ded04d6422eaf6d66719043cb6f |
| institution | Matheson Library |
| issn | 1993-8985 2658-4794 |
| language | Russian |
| publishDate | 2019-07-01 |
| publisher | Saint Petersburg Electrotechnical University "LETI" |
| record_format | Article |
| series | Известия высших учебных заведений России: Радиоэлектроника |
| spelling | doaj-art-a80b3ded04d6422eaf6d66719043cb6f2025-08-03T19:50:26ZrusSaint Petersburg Electrotechnical University "LETI"Известия высших учебных заведений России: Радиоэлектроника1993-89852658-47942019-07-01223889610.32603/1993-8985-2019-22-3-88-96285THE INFLUENCE OF THE THERMAL REDUCTION TEMPERATURE ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF REDUCED GRAPHENE OXIDE FILMSDenis Yu. Kornilov0LLC "AkKo Lab"Introduction. An incomplete list of graphene properties includes high electric conductivity, thermal conductivity, strength, large surface area, high light transmittance. Graphene is a very promising material from the point of view of its application in micro- and nanoelectronics. In addition, graphene advantage is a possibility of its obtaining by various ways. It allows creating materials with desired physicochemical properties by using appropriate technological methods. Objective. The investigation of a thermal reduction temperature influence on physicochemical properties of graphene oxide (GO) films. Materials and methods. In the present work, GO films are obtained on a slide surface by its immersing and removing from a graphene oxide water dispersion (dip coating). Obtained samples are studied by methods of scanning electron microscopy, Raman spectroscopy, and elemental CHN analysis. A sheet resistance is measured by a four-point probes method. Results. A content difference of elements (C, H, N) in studied samples, and both graphene structure defectiveness and sheet resistance decrease, are found to be proportional to a reduction temperature increase. A GO films thickness decrease during a heat treatment is also observed, which is presumably associated with a functional GO groups loss while thermal reduction. Conclusion. Research results demonstrate a possibility of a carbon films with desired physicochemical properties obtaining from a reduced graphene oxide (RGO), which can be used in thin-film technologies. Presented materials can also be useful in issues related to GO and RGO obtaining and applying.https://re.eltech.ru/jour/article/view/327graphene oxidereduced graphene oxidemultilayer films |
| spellingShingle | Denis Yu. Kornilov THE INFLUENCE OF THE THERMAL REDUCTION TEMPERATURE ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF REDUCED GRAPHENE OXIDE FILMS Известия высших учебных заведений России: Радиоэлектроника graphene oxide reduced graphene oxide multilayer films |
| title | THE INFLUENCE OF THE THERMAL REDUCTION TEMPERATURE ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF REDUCED GRAPHENE OXIDE FILMS |
| title_full | THE INFLUENCE OF THE THERMAL REDUCTION TEMPERATURE ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF REDUCED GRAPHENE OXIDE FILMS |
| title_fullStr | THE INFLUENCE OF THE THERMAL REDUCTION TEMPERATURE ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF REDUCED GRAPHENE OXIDE FILMS |
| title_full_unstemmed | THE INFLUENCE OF THE THERMAL REDUCTION TEMPERATURE ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF REDUCED GRAPHENE OXIDE FILMS |
| title_short | THE INFLUENCE OF THE THERMAL REDUCTION TEMPERATURE ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF REDUCED GRAPHENE OXIDE FILMS |
| title_sort | influence of the thermal reduction temperature on the structure and electrophysical properties of reduced graphene oxide films |
| topic | graphene oxide reduced graphene oxide multilayer films |
| url | https://re.eltech.ru/jour/article/view/327 |
| work_keys_str_mv | AT denisyukornilov theinfluenceofthethermalreductiontemperatureonthestructureandelectrophysicalpropertiesofreducedgrapheneoxidefilms AT denisyukornilov influenceofthethermalreductiontemperatureonthestructureandelectrophysicalpropertiesofreducedgrapheneoxidefilms |