Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors
This work presents a systematic study of the sensitivities of silicon avalanche photodiode (APD) performance metrics, including gain, excess noise, and bandwidth, to potential variabilities in the fabrication process. The APDs simulations are performed using a state-of-the-art Full-Band Monte Carlo...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10508076/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1839644638710857728 |
|---|---|
| author | David Liu Luca F. Errico Matteo G. C. Alasio Mike Zhu Enrico Bellotti |
| author_facet | David Liu Luca F. Errico Matteo G. C. Alasio Mike Zhu Enrico Bellotti |
| author_sort | David Liu |
| collection | DOAJ |
| description | This work presents a systematic study of the sensitivities of silicon avalanche photodiode (APD) performance metrics, including gain, excess noise, and bandwidth, to potential variabilities in the fabrication process. The APDs simulations are performed using a state-of-the-art Full-Band Monte Carlo (FBMC) device simulator with the integrated band structure and scattering rates calculated <inline-formula><tex-math notation="LaTeX">$\mathit{ab{-}initio}$</tex-math></inline-formula> with density-functional theory (DFT). The focus of this work is placed on the performance of CMOS-compatible lateral transport separate-absorber-multiplier APDs (SAM APDs) fabricated on an SOI layer. The FBMC material models are validated against experimental data for carrier velocities and impact ionization coefficients, in addition to the reported APD performance of a germanium-on-silicon (Ge-on-Si) separate-absorber-charge-multiplier APD (SACM APD). The fabrication variations considered for the SAM APD include slight variations to the doping concentration and physical dimensions of the multiplier and absorber regions, as well as the thickness of the SOI layer. The results show that fabrication variations may have significant effects on the gain of the APD, but minimally affect the excess noise factor and bandwidth of the devices. |
| format | Article |
| id | doaj-art-a2d60749242645779b51bf31d92f8331 |
| institution | Matheson Library |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-a2d60749242645779b51bf31d92f83312025-07-01T23:59:33ZengIEEEIEEE Photonics Journal1943-06552024-01-0116311110.1109/JPHOT.2024.339336610508076Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche PhotodetectorsDavid Liu0https://orcid.org/0009-0008-1867-9660Luca F. Errico1https://orcid.org/0009-0002-4924-8763Matteo G. C. Alasio2https://orcid.org/0000-0002-5175-2769Mike Zhu3https://orcid.org/0000-0001-6182-1775Enrico Bellotti4https://orcid.org/0000-0002-4747-8584Department of Electrical and Computer Engineering, Boston University, Boston, MA, USADepartment of Electrical and Computer Engineering, Boston University, Boston, MA, USADipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Torino, ItalyDepartment of Electrical and Computer Engineering, Boston University, Boston, MA, USADepartment of Electrical and Computer Engineering, Boston University, Boston, MA, USAThis work presents a systematic study of the sensitivities of silicon avalanche photodiode (APD) performance metrics, including gain, excess noise, and bandwidth, to potential variabilities in the fabrication process. The APDs simulations are performed using a state-of-the-art Full-Band Monte Carlo (FBMC) device simulator with the integrated band structure and scattering rates calculated <inline-formula><tex-math notation="LaTeX">$\mathit{ab{-}initio}$</tex-math></inline-formula> with density-functional theory (DFT). The focus of this work is placed on the performance of CMOS-compatible lateral transport separate-absorber-multiplier APDs (SAM APDs) fabricated on an SOI layer. The FBMC material models are validated against experimental data for carrier velocities and impact ionization coefficients, in addition to the reported APD performance of a germanium-on-silicon (Ge-on-Si) separate-absorber-charge-multiplier APD (SACM APD). The fabrication variations considered for the SAM APD include slight variations to the doping concentration and physical dimensions of the multiplier and absorber regions, as well as the thickness of the SOI layer. The results show that fabrication variations may have significant effects on the gain of the APD, but minimally affect the excess noise factor and bandwidth of the devices.https://ieeexplore.ieee.org/document/10508076/Silicon photonicsavalanche photodetectorsilicon APDslateral avalanche photodetectorintegrated optoeletronics |
| spellingShingle | David Liu Luca F. Errico Matteo G. C. Alasio Mike Zhu Enrico Bellotti Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors IEEE Photonics Journal Silicon photonics avalanche photodetector silicon APDs lateral avalanche photodetector integrated optoeletronics |
| title | Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors |
| title_full | Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors |
| title_fullStr | Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors |
| title_full_unstemmed | Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors |
| title_short | Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors |
| title_sort | modeling the impact of fabrication variabilities on the performance of silicon avalanche photodetectors |
| topic | Silicon photonics avalanche photodetector silicon APDs lateral avalanche photodetector integrated optoeletronics |
| url | https://ieeexplore.ieee.org/document/10508076/ |
| work_keys_str_mv | AT davidliu modelingtheimpactoffabricationvariabilitiesontheperformanceofsiliconavalanchephotodetectors AT lucaferrico modelingtheimpactoffabricationvariabilitiesontheperformanceofsiliconavalanchephotodetectors AT matteogcalasio modelingtheimpactoffabricationvariabilitiesontheperformanceofsiliconavalanchephotodetectors AT mikezhu modelingtheimpactoffabricationvariabilitiesontheperformanceofsiliconavalanchephotodetectors AT enricobellotti modelingtheimpactoffabricationvariabilitiesontheperformanceofsiliconavalanchephotodetectors |