Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical Treatments
In this work, the influences of thermal annealing and chemical passivation on the optical and electrical properties of ultraviolet light-emitting-diode (UV-LED) were investigated. The electroluminescence (EL) intensities of the LEDs under KOH treatment and thermal annealing increased by 48% and 81%,...
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8884718/ |
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| author | Moheb Sheikhi Wei Guo Yijun Dai Mei Cui Jason Hoo Shiping Guo Liang Xu Jianzhe Liu Jichun Ye |
| author_facet | Moheb Sheikhi Wei Guo Yijun Dai Mei Cui Jason Hoo Shiping Guo Liang Xu Jianzhe Liu Jichun Ye |
| author_sort | Moheb Sheikhi |
| collection | DOAJ |
| description | In this work, the influences of thermal annealing and chemical passivation on the optical and electrical properties of ultraviolet light-emitting-diode (UV-LED) were investigated. The electroluminescence (EL) intensities of the LEDs under KOH treatment and thermal annealing increased by 48% and 81%, respectively compared to as-fabricated LED under current level of 10 mA. Cathodoluminescence (CL) mapping of UV-LEDs confirmed no variation of the density of the non-radiative recombination centers after surface treatments, and no obvious change in surface morphology was identified due to lacking of energy for surface atom migration. However, Raman spectroscopy indicates a relaxation of compressive strains inside the thin film after both thermal and chemical treatments, and conductive atomic force microscopy (c-AFM) also illustrated reduced leakage current after KOH passivation, which are responsible for the improved luminescence properties of UV-LEDs. |
| format | Article |
| id | doaj-art-a1952ae41f3046a085d3da72841431c0 |
| institution | Matheson Library |
| issn | 1943-0655 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-a1952ae41f3046a085d3da72841431c02025-07-01T23:48:59ZengIEEEIEEE Photonics Journal1943-06552019-01-011161810.1109/JPHOT.2019.29500498884718Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical TreatmentsMoheb Sheikhi0Wei Guo1https://orcid.org/0000-0002-6233-0529Yijun Dai2Mei Cui3Jason Hoo4Shiping Guo5Liang Xu6Jianzhe Liu7Jichun Ye8Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, ChinaAdvanced Micro-Fabrication Equipment, Inc., Shanghai, ChinaAdvanced Micro-Fabrication Equipment, Inc., Shanghai, ChinaZhejiang Bright Semiconductor Technology Company, Ltd., Jinhua, ChinaZhejiang Bright Semiconductor Technology Company, Ltd., Jinhua, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, ChinaIn this work, the influences of thermal annealing and chemical passivation on the optical and electrical properties of ultraviolet light-emitting-diode (UV-LED) were investigated. The electroluminescence (EL) intensities of the LEDs under KOH treatment and thermal annealing increased by 48% and 81%, respectively compared to as-fabricated LED under current level of 10 mA. Cathodoluminescence (CL) mapping of UV-LEDs confirmed no variation of the density of the non-radiative recombination centers after surface treatments, and no obvious change in surface morphology was identified due to lacking of energy for surface atom migration. However, Raman spectroscopy indicates a relaxation of compressive strains inside the thin film after both thermal and chemical treatments, and conductive atomic force microscopy (c-AFM) also illustrated reduced leakage current after KOH passivation, which are responsible for the improved luminescence properties of UV-LEDs.https://ieeexplore.ieee.org/document/8884718/UV-LEDsurface treatmentelectroluminescencestrain relaxation. |
| spellingShingle | Moheb Sheikhi Wei Guo Yijun Dai Mei Cui Jason Hoo Shiping Guo Liang Xu Jianzhe Liu Jichun Ye Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical Treatments IEEE Photonics Journal UV-LED surface treatment electroluminescence strain relaxation. |
| title | Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical Treatments |
| title_full | Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical Treatments |
| title_fullStr | Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical Treatments |
| title_full_unstemmed | Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical Treatments |
| title_short | Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical Treatments |
| title_sort | mechanism of improved luminescence intensity of ultraviolet light emitting diodes uv leds under thermal and chemical treatments |
| topic | UV-LED surface treatment electroluminescence strain relaxation. |
| url | https://ieeexplore.ieee.org/document/8884718/ |
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