High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes
Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiple-quantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- <inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$&...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7553585/ |
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