High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes
Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiple-quantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- <inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$&...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7553585/ |
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| Summary: | Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiple-quantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- <inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$</tex-math></inline-formula>- thick GaN layer grown on a patterned (10–12) <inline-formula> <tex-math notation="LaTeX">$r$</tex-math></inline-formula>- plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 <inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$</tex-math></inline-formula> × 300 <inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$</tex-math></inline-formula> LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11–23] <sub>InGaN/GaN</sub> direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications. |
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| ISSN: | 1943-0655 |