Study on Growth Process of Ag(In, Ga)Se2 Films by a Three-Stage Co-Evaporation Method Using Molecular Beam Epitaxy Apparatus

Study on Growth Process of Ag(In, Ga)Se2 Films by a Three-Stage Co-Evaporation Method Using Molecular Beam Epitaxy Apparatus

Ag(In, Ga)Se<sub>2</sub> (AIGS) has been considered as a promising candidate material for the top cell of chalcopyrite-based tandem solar cells. In this work, the process of (AIGS) film growth by a three-stage molecular beam epitaxy method is studied. The diffusion of silver and grain gr...

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Bibliographic Details
Main Authors: Xianfeng Zhang, Masakazu Kobayashi
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
Ag(In
Ga)Se<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$_2$</tex-math> </inline-formula> </named-content>
three-stage
Ag diffusion
growth mechanism.
Online Access:https://ieeexplore.ieee.org/document/7858727/
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Summary:Ag(In, Ga)Se<sub>2</sub> (AIGS) has been considered as a promising candidate material for the top cell of chalcopyrite-based tandem solar cells. In this work, the process of (AIGS) film growth by a three-stage molecular beam epitaxy method is studied. The diffusion of silver and grain growth of AIGS films from the first stage-deposited (In, Ga)<sub>2</sub>Se<sub>3</sub> is investigated. Energy dispersive spectroscopy mapping is used to reveal the distribution of silver in the film during each stage of the deposition process. A sharp silver accumulation at the surface of the film at the early stage of the deposition process is observed. This has led to the formation of a silver-rich phase, which gradually diffused into the film to produce a homogeneous distribution. X-ray diffraction results illustrate the phase changes of AIGS films. Based on the result, a growth model for AIGS films from the first stage to the second stage is suggested as (In, Ga)<sub>2</sub>Se<sub>3</sub> &#x2192; Ag<sub>9</sub> (In, Ga)Se<sub>6 </sub> at the surface and (In, Ga)<sub>2</sub>Se<sub>3</sub> at the bottom of the film &#x2192; silver-rich AIGS film. During the third stage, the silver-rich film was converted to silver-poor film. The performance of AIGS solar cells fabricated from various samples was compared, and a highest efficiency of 7.1&#x0025; was obtained.
ISSN:1943-0655

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