First-Principles Modelling of the Properties of Graphene Modified with Fluorine Atoms
The results of modeling the properties of graphene modified with fluorine atoms are presented. The creation of modern semiconductor devices requires the introduction of new materials. Graphene is one of them that is of interest to researchers. The addition of fluorine, hydrogen, and other chemical e...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2023-08-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/3684 |
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| _version_ | 1839567687899938816 |
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| author | V. N. Mishchanka |
| author_facet | V. N. Mishchanka |
| author_sort | V. N. Mishchanka |
| collection | DOAJ |
| description | The results of modeling the properties of graphene modified with fluorine atoms are presented. The creation of modern semiconductor devices requires the introduction of new materials. Graphene is one of them that is of interest to researchers. The addition of fluorine, hydrogen, and other chemical elements to graphene makes it possible to create its modifications. On this basis, it is possible to develop semiconductor devices and devices with improved output characteristics. The basic characteristics of graphene modification with the use of fluorine atoms, namely, the band diagram, the dependences of the density of state (DOS parameter) of electrons and holes on the energy value, were obtained by first-principles modeling. The dependences of charge carrier mobility on temperature are determined for the iterative solution of the Boltzmann transport equation The dependences and parameters obtained for fluorinated graphene can serve as a basis for creating new heterostructural devices containing layers of modified graphene and other semiconductor materials. |
| format | Article |
| id | doaj-art-9b5a8d341fc14d35a3e884577bd34b01 |
| institution | Matheson Library |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2023-08-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-9b5a8d341fc14d35a3e884577bd34b012025-08-04T17:38:22ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482023-08-01214717510.35596/1729-7648-2023-21-4-71-751923First-Principles Modelling of the Properties of Graphene Modified with Fluorine AtomsV. N. Mishchanka0Belarusian State University of Informatics and RadioelectronicsThe results of modeling the properties of graphene modified with fluorine atoms are presented. The creation of modern semiconductor devices requires the introduction of new materials. Graphene is one of them that is of interest to researchers. The addition of fluorine, hydrogen, and other chemical elements to graphene makes it possible to create its modifications. On this basis, it is possible to develop semiconductor devices and devices with improved output characteristics. The basic characteristics of graphene modification with the use of fluorine atoms, namely, the band diagram, the dependences of the density of state (DOS parameter) of electrons and holes on the energy value, were obtained by first-principles modeling. The dependences of charge carrier mobility on temperature are determined for the iterative solution of the Boltzmann transport equation The dependences and parameters obtained for fluorinated graphene can serve as a basis for creating new heterostructural devices containing layers of modified graphene and other semiconductor materials.https://doklady.bsuir.by/jour/article/view/3684graphenefluorinemodelingzone diagramsemiconductor structure |
| spellingShingle | V. N. Mishchanka First-Principles Modelling of the Properties of Graphene Modified with Fluorine Atoms Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki graphene fluorine modeling zone diagram semiconductor structure |
| title | First-Principles Modelling of the Properties of Graphene Modified with Fluorine Atoms |
| title_full | First-Principles Modelling of the Properties of Graphene Modified with Fluorine Atoms |
| title_fullStr | First-Principles Modelling of the Properties of Graphene Modified with Fluorine Atoms |
| title_full_unstemmed | First-Principles Modelling of the Properties of Graphene Modified with Fluorine Atoms |
| title_short | First-Principles Modelling of the Properties of Graphene Modified with Fluorine Atoms |
| title_sort | first principles modelling of the properties of graphene modified with fluorine atoms |
| topic | graphene fluorine modeling zone diagram semiconductor structure |
| url | https://doklady.bsuir.by/jour/article/view/3684 |
| work_keys_str_mv | AT vnmishchanka firstprinciplesmodellingofthepropertiesofgraphenemodifiedwithfluorineatoms |