Adsorption Characteristics of an AlGaN/GaN Heterojunction on Potassium Ions
Slight changes in potassium levels can affect health. Therefore, rapid, reliable, and quantitative determination of potassium ion content is important for medical diagnosis. AlGaN, as a semiconductor material with good biocompatibility, has many advantages in the development of new potassium ion sen...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
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| Series: | Molecules |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1420-3049/30/13/2669 |
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| Summary: | Slight changes in potassium levels can affect health. Therefore, rapid, reliable, and quantitative determination of potassium ion content is important for medical diagnosis. AlGaN, as a semiconductor material with good biocompatibility, has many advantages in the development of new potassium ion sensors. Understanding the adsorption behavior of a specific ion on the AlGaN surface and the eventual effect on AlGaN/GaN’s heterostructure interface is the key to obtaining high-performance nitride sensors. In this paper, we calculated the changes in the density of states and energy bands of the material after AlGaN adsorbed potassium ions through first-principles simulation. Combined with two-dimensional device simulation software, the changes in device performance caused by the changes in material properties are presented. The simulation results show that the adsorption of a single potassium ion can cause a current change in the order of milliamperes, providing a theoretical reference for the subsequent development of high-sensitivity potassium ion sensors. |
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| ISSN: | 1420-3049 |