An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic
A forward-biased silicon-based light-emitting device (Si-LED) was designed and fabricated by standard 0.18 <italic>μ</italic>m complementary metal-oxide-semiconductor (CMOS) technology without any modification. For the Si-LED, wedge-shaped electrodes and needle-like tip were d...
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IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8639069/ |
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| author | Jia Cong Luhong Mao Rong Xie Sheng Xie Weilian Guo |
| author_facet | Jia Cong Luhong Mao Rong Xie Sheng Xie Weilian Guo |
| author_sort | Jia Cong |
| collection | DOAJ |
| description | A forward-biased silicon-based light-emitting device (Si-LED) was designed and fabricated by standard 0.18 <italic>μ</italic>m complementary metal-oxide-semiconductor (CMOS) technology without any modification. For the Si-LED, wedge-shaped electrodes and needle-like tip were designed to enhance the intensity of electric field. When the Si-LED works at high forward current, the output optical power increases rapidly with the increase of forward current, which is a non-linear growth similar to exponential. To the best of our knowledge, such a phenomenon has never been reported before. Moreover, when the forward current is at 200 mA, the optical power density reaches 32.7 nW·<italic>μ</italic>m<sup> 2</sup>, which is two or three orders higher than that of other ever reported forward-biased Si-LED fabricated by standard CMOS technology. In addition, the red shift of the main peak in the spectra of Si-LED was observed and analyzed, and also the light-emission mechanism of each peak in the spectra was given. |
| format | Article |
| id | doaj-art-98f074fd8c3946ff8bc18a82c9d66a85 |
| institution | Matheson Library |
| issn | 1943-0655 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-98f074fd8c3946ff8bc18a82c9d66a852025-07-01T23:44:07ZengIEEEIEEE Photonics Journal1943-06552019-01-0111211010.1109/JPHOT.2019.28975788639069An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current CharacteristicJia Cong0https://orcid.org/0000-0003-3526-499XLuhong Mao1https://orcid.org/0000-0003-4379-8350Rong Xie2https://orcid.org/0000-0001-9761-0670Sheng Xie3Weilian Guo4School of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaHuawei Technologies CO., LTD, Shenzhen, ChinaSchool of Microelectronics, Tianjin University, Tianjin, ChinaSchool of Microelectronics, Tianjin University, Tianjin, ChinaA forward-biased silicon-based light-emitting device (Si-LED) was designed and fabricated by standard 0.18 <italic>μ</italic>m complementary metal-oxide-semiconductor (CMOS) technology without any modification. For the Si-LED, wedge-shaped electrodes and needle-like tip were designed to enhance the intensity of electric field. When the Si-LED works at high forward current, the output optical power increases rapidly with the increase of forward current, which is a non-linear growth similar to exponential. To the best of our knowledge, such a phenomenon has never been reported before. Moreover, when the forward current is at 200 mA, the optical power density reaches 32.7 nW·<italic>μ</italic>m<sup> 2</sup>, which is two or three orders higher than that of other ever reported forward-biased Si-LED fabricated by standard CMOS technology. In addition, the red shift of the main peak in the spectra of Si-LED was observed and analyzed, and also the light-emission mechanism of each peak in the spectra was given.https://ieeexplore.ieee.org/document/8639069/Complementary metal-oxide-semiconductor (CMOS)nonlinearitylight-emission mechanismred-shiftsilicon-based light-emitting devices (Si-LEDs)electroluminescence (EL) spectra. |
| spellingShingle | Jia Cong Luhong Mao Rong Xie Sheng Xie Weilian Guo An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic IEEE Photonics Journal Complementary metal-oxide-semiconductor (CMOS) nonlinearity light-emission mechanism red-shift silicon-based light-emitting devices (Si-LEDs) electroluminescence (EL) spectra. |
| title | An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic |
| title_full | An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic |
| title_fullStr | An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic |
| title_full_unstemmed | An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic |
| title_short | An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic |
| title_sort | efficient forward biased si cmos led with high optical power density and nonlinear optical power current characteristic |
| topic | Complementary metal-oxide-semiconductor (CMOS) nonlinearity light-emission mechanism red-shift silicon-based light-emitting devices (Si-LEDs) electroluminescence (EL) spectra. |
| url | https://ieeexplore.ieee.org/document/8639069/ |
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