An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic
A forward-biased silicon-based light-emitting device (Si-LED) was designed and fabricated by standard 0.18 <italic>μ</italic>m complementary metal-oxide-semiconductor (CMOS) technology without any modification. For the Si-LED, wedge-shaped electrodes and needle-like tip were d...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8639069/ |
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| Summary: | A forward-biased silicon-based light-emitting device (Si-LED) was designed and fabricated by standard 0.18 <italic>μ</italic>m complementary metal-oxide-semiconductor (CMOS) technology without any modification. For the Si-LED, wedge-shaped electrodes and needle-like tip were designed to enhance the intensity of electric field. When the Si-LED works at high forward current, the output optical power increases rapidly with the increase of forward current, which is a non-linear growth similar to exponential. To the best of our knowledge, such a phenomenon has never been reported before. Moreover, when the forward current is at 200 mA, the optical power density reaches 32.7 nW·<italic>μ</italic>m<sup> 2</sup>, which is two or three orders higher than that of other ever reported forward-biased Si-LED fabricated by standard CMOS technology. In addition, the red shift of the main peak in the spectra of Si-LED was observed and analyzed, and also the light-emission mechanism of each peak in the spectra was given. |
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| ISSN: | 1943-0655 |