Development of 6-inch h-BN thick wafers
We report the first successful synthesis of 40 μm thick h-BN wafers with a diameter of 6 in. using hydride vapor phase epitaxy. This accomplishment was made possible by employing BCl3 as the B precursor to eliminate carbon impurities, utilizing inert N2 as the carrier and separation gas to isolate B...
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| Format: | Article |
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AIP Publishing LLC
2025-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0276437 |
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| author | Z. Alemoush M. Almohammad J. Li J. Y. Lin H. X. Jiang |
| author_facet | Z. Alemoush M. Almohammad J. Li J. Y. Lin H. X. Jiang |
| author_sort | Z. Alemoush |
| collection | DOAJ |
| description | We report the first successful synthesis of 40 μm thick h-BN wafers with a diameter of 6 in. using hydride vapor phase epitaxy. This accomplishment was made possible by employing BCl3 as the B precursor to eliminate carbon impurities, utilizing inert N2 as the carrier and separation gas to isolate BCl3 and NH3 gas sources, and implementing low-pressure growth to prevent parasitic reactions in the gas phase. These strategies enabled the growth of h-BN wafers 6 in. in diameter with improved uniformity in thickness and crystallinity. Analysis through x-ray diffraction, selected area electron diffraction, and transmission electron microscopy revealed that the wafer deposited at the lowest pressure of 20 Torr exhibited highest crystalline quality with measured c-lattice constant c = 6.66 Å and an a-lattice constant a = 2.48 Å, in good agreement with the expected lattice parameters of phase-pure h-BN. Time-resolved photoluminescence emission spectroscopy unveiled a dominant emission line near 3.41 eV, with a recombination lifetime of 2.7 ns at room temperature. These spectroscopic characteristics, when considered alongside a previous theoretical study, suggest that nitrogen vacancies (VN) constitute the primary defects in these large-diameter h-BN wafers. The achievement of 6 in. diameter wafers with substantial thickness represents a significant advancement in h-BN development, paving the way for the industrial adoption of h-BN technologies, with implications for quantum information and technology, single photon emitters, neutron detectors, power electronics, and deep UV photonics. |
| format | Article |
| id | doaj-art-96fd0b90bae44b58a045f303e6f8ca5c |
| institution | Matheson Library |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | AIP Publishing LLC |
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| series | AIP Advances |
| spelling | doaj-art-96fd0b90bae44b58a045f303e6f8ca5c2025-07-02T17:30:57ZengAIP Publishing LLCAIP Advances2158-32262025-06-01156065003065003-610.1063/5.0276437Development of 6-inch h-BN thick wafersZ. Alemoush0M. Almohammad1J. Li2J. Y. Lin3H. X. Jiang4Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USADepartment of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USADepartment of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USADepartment of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USADepartment of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USAWe report the first successful synthesis of 40 μm thick h-BN wafers with a diameter of 6 in. using hydride vapor phase epitaxy. This accomplishment was made possible by employing BCl3 as the B precursor to eliminate carbon impurities, utilizing inert N2 as the carrier and separation gas to isolate BCl3 and NH3 gas sources, and implementing low-pressure growth to prevent parasitic reactions in the gas phase. These strategies enabled the growth of h-BN wafers 6 in. in diameter with improved uniformity in thickness and crystallinity. Analysis through x-ray diffraction, selected area electron diffraction, and transmission electron microscopy revealed that the wafer deposited at the lowest pressure of 20 Torr exhibited highest crystalline quality with measured c-lattice constant c = 6.66 Å and an a-lattice constant a = 2.48 Å, in good agreement with the expected lattice parameters of phase-pure h-BN. Time-resolved photoluminescence emission spectroscopy unveiled a dominant emission line near 3.41 eV, with a recombination lifetime of 2.7 ns at room temperature. These spectroscopic characteristics, when considered alongside a previous theoretical study, suggest that nitrogen vacancies (VN) constitute the primary defects in these large-diameter h-BN wafers. The achievement of 6 in. diameter wafers with substantial thickness represents a significant advancement in h-BN development, paving the way for the industrial adoption of h-BN technologies, with implications for quantum information and technology, single photon emitters, neutron detectors, power electronics, and deep UV photonics.http://dx.doi.org/10.1063/5.0276437 |
| spellingShingle | Z. Alemoush M. Almohammad J. Li J. Y. Lin H. X. Jiang Development of 6-inch h-BN thick wafers AIP Advances |
| title | Development of 6-inch h-BN thick wafers |
| title_full | Development of 6-inch h-BN thick wafers |
| title_fullStr | Development of 6-inch h-BN thick wafers |
| title_full_unstemmed | Development of 6-inch h-BN thick wafers |
| title_short | Development of 6-inch h-BN thick wafers |
| title_sort | development of 6 inch h bn thick wafers |
| url | http://dx.doi.org/10.1063/5.0276437 |
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