Design and implementation of a 1.65~3 GHz 500 watts power amplifier
Modern transmission systems have put forward higher and higher requirements for the working frequency band and power level of power amplifiers, and the design of power amplifiers based on GaN power devices can meet these new requirements. In this paper, GaN HEMT is used to design the basic power amp...
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| Format: | Article |
| Language: | Chinese |
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National Computer System Engineering Research Institute of China
2022-04-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000148336 |
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| _version_ | 1839639533044367360 |
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| author | Xue Xin Dong Liang Wu Jiaqian |
| author_facet | Xue Xin Dong Liang Wu Jiaqian |
| author_sort | Xue Xin |
| collection | DOAJ |
| description | Modern transmission systems have put forward higher and higher requirements for the working frequency band and power level of power amplifiers, and the design of power amplifiers based on GaN power devices can meet these new requirements. In this paper, GaN HEMT is used to design the basic power amplifier unit, and the 5-path power synthesizer with asymmetric structure is innovatively used to realize the required power of the whole machine and improve the efficiency of the whole machine. The operating frequency of the power amplifier is 1.65~3 GHz, the measured output power is greater than 500 W(CW), and the power conversion efficiency is greater than 25%. Compared with similar products, the efficiency and volume index have been greatly improved.This product is suitable for high-power system applications, such as EMC testing, electronic countermeasures, etc. |
| format | Article |
| id | doaj-art-961d2d82b19f47359b8a70dfcb5f9f2f |
| institution | Matheson Library |
| issn | 0258-7998 |
| language | zho |
| publishDate | 2022-04-01 |
| publisher | National Computer System Engineering Research Institute of China |
| record_format | Article |
| series | Dianzi Jishu Yingyong |
| spelling | doaj-art-961d2d82b19f47359b8a70dfcb5f9f2f2025-07-04T08:21:50ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982022-04-0148411311610.16157/j.issn.0258-7998.2121993000148336Design and implementation of a 1.65~3 GHz 500 watts power amplifierXue Xin0Dong Liang1Wu Jiaqian2No.36 Research Institute of CETC，Jiaxing 314033，ChinaNo.36 Research Institute of CETC，Jiaxing 314033，ChinaNo.36 Research Institute of CETC，Jiaxing 314033，ChinaModern transmission systems have put forward higher and higher requirements for the working frequency band and power level of power amplifiers, and the design of power amplifiers based on GaN power devices can meet these new requirements. In this paper, GaN HEMT is used to design the basic power amplifier unit, and the 5-path power synthesizer with asymmetric structure is innovatively used to realize the required power of the whole machine and improve the efficiency of the whole machine. The operating frequency of the power amplifier is 1.65~3 GHz, the measured output power is greater than 500 W(CW), and the power conversion efficiency is greater than 25%. Compared with similar products, the efficiency and volume index have been greatly improved.This product is suitable for high-power system applications, such as EMC testing, electronic countermeasures, etc.http://www.chinaaet.com/article/3000148336gan power devicehigh powerhigh efficiency |
| spellingShingle | Xue Xin Dong Liang Wu Jiaqian Design and implementation of a 1.65~3 GHz 500 watts power amplifier Dianzi Jishu Yingyong gan power device high power high efficiency |
| title | Design and implementation of a 1.65~3 GHz 500 watts power amplifier |
| title_full | Design and implementation of a 1.65~3 GHz 500 watts power amplifier |
| title_fullStr | Design and implementation of a 1.65~3 GHz 500 watts power amplifier |
| title_full_unstemmed | Design and implementation of a 1.65~3 GHz 500 watts power amplifier |
| title_short | Design and implementation of a 1.65~3 GHz 500 watts power amplifier |
| title_sort | design and implementation of a 1 65 3 ghz 500 watts power amplifier |
| topic | gan power device high power high efficiency |
| url | http://www.chinaaet.com/article/3000148336 |
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