Silicon Based GeSn p-i-n Photodetector for SWIR Detection

Silicon Based GeSn p-i-n Photodetector for SWIR Detection

We reported an investigation of GeSn-based p-i-n photodetectors (PDs) with a <inline-formula> <tex-math notation="LaTeX">${\rm{Ge}}_{{\rm{0.92}}}{\rm{Sn}}_{{\rm{0.08}}}$</tex-math></inline-formula> active layer grown on n-type Si (100) substrate using molecular beam...

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Bibliographic Details
Main Authors: Hui Cong, Chunlai Xue, Jun Zheng, Fan Yang, Kai Yu, Zhi Liu, Xu Zhang, Buwen Cheng, Qiming Wang
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
Subjects:
GeSn
photodetector
short-wave infrared (SWIR) imaging.
Online Access:https://ieeexplore.ieee.org/document/7563433/
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Summary:We reported an investigation of GeSn-based p-i-n photodetectors (PDs) with a <inline-formula> <tex-math notation="LaTeX">${\rm{Ge}}_{{\rm{0.92}}}{\rm{Sn}}_{{\rm{0.08}}}$</tex-math></inline-formula> active layer grown on n-type Si (100) substrate using molecular beam epitaxy (MBE). The GeSn photodetector achieved a wide spectrum detection whose cutoff wavelength can reach to 2.3 &#x03BC;m. The PDs exhibited a high performance near 2.0 &#x03BC;m with a responsivity of 93 mA&#x002F;W and a dark current of 171 &#x03BC;A under a reverse bias of 1 V at room temperature. This work represented a promising technology to develop Si-based short-wave infrared (SWIR) photodetectors.
ISSN:1943-0655

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