Calculation of Voltage-Current Characteristics of Field-Effect Transistors in Integrated Circuits by Analytical Methods
Analytical solutions and formulae for calculating current-voltage static characteristics of MOS transistors are presented. Calculations are based on verifications of a charge conservation principle which makes it possible to determine the expected parameters of new devices at different process condi...
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Main Author: | V. A. Bondarev |
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Format: | Article |
Language: | Russian |
Published: |
Belarusian National Technical University
2006-12-01
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Series: | Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика |
Online Access: | https://energy.bntu.by/jour/article/view/688 |
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