THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES

THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES

At present there are various methods of control, based on various physical principles and possessing a wide variety of different sensitivity, diversity of applications.

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Bibliographic Details
Main Author: Т. E. Sarkarov
Format: Article
Language:Russian
Published: Dagestan State Technical University 2016-07-01
Series:Вестник Дагестанского государственного технического университета: Технические науки
Subjects:
substrate
silicon
epitaxy
oxidation
defects
dislocation
semiconductors
technology
method
material
crystal structure
volume
diffusion
surface concentration
Online Access:https://vestnik.dgtu.ru/jour/article/view/25
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Description
Summary:At present there are various methods of control, based on various physical principles and possessing a wide variety of different sensitivity, diversity of applications.
ISSN:2073-6185
2542-095X

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