Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure
In this paper, we analyze the retention characteristics of vertical NAND(V-NAND) with dimpled (convex and concave) structures considering the impact of adjacent cell states. Additionally, we assess the efficiency of the previously proposed dummy cell program (DMP) in improving retention characterist...
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| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/11082327/ |
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| author | Seongwoo Kim Gunwook Yoon Seungjae Baik Myounggon Kang |
| author_facet | Seongwoo Kim Gunwook Yoon Seungjae Baik Myounggon Kang |
| author_sort | Seongwoo Kim |
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| description | In this paper, we analyze the retention characteristics of vertical NAND(V-NAND) with dimpled (convex and concave) structures considering the impact of adjacent cell states. Additionally, we assess the efficiency of the previously proposed dummy cell program (DMP) in improving retention characteristics. Our results indicate that when the adjacent cell is in the erased state, the retention characteristics of the target cell are affected by conduction band <inline-formula> <tex-math notation="LaTeX">$(E_{C})$ </tex-math></inline-formula> variations due to trapped electrons. The concave structure shows the best retention characteristics, whereas the convex structure shows the most degradation. This difference becomes even more pronounced when the adjacent cell is in the programmed state. However, when DMP is applied to the convex structure, which exhibits the most degraded retention characteristics, the greatest improvement is observed due to significant changes in channel potential <inline-formula> <tex-math notation="LaTeX">$(V_{ch})$ </tex-math></inline-formula> caused by the fast-programming speed. |
| format | Article |
| id | doaj-art-80731bd7186b45d891451623c60a0b9c |
| institution | Matheson Library |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-80731bd7186b45d891451623c60a0b9c2025-08-01T23:00:31ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011365565810.1109/JEDS.2025.358968011082327Retention Characteristics and DMP Efficiency in V-NAND With Dimple StructureSeongwoo Kim0https://orcid.org/0009-0003-0254-7966Gunwook Yoon1Seungjae Baik2Myounggon Kang3https://orcid.org/0000-0003-4132-0038Department of Intelligent Semiconductor Engineering, University of Seoul, Seoul, Republic of KoreaFLASH Technology Development Semiconductor Research Center, Samsung Electronics, Yongin, South KoreaFLASH Technology Development Semiconductor Research Center, Samsung Electronics, Yongin, South KoreaDepartment of Intelligent Semiconductor Engineering, School of Advanced Fusion Studies, University of Seoul, Seoul, Republic of KoreaIn this paper, we analyze the retention characteristics of vertical NAND(V-NAND) with dimpled (convex and concave) structures considering the impact of adjacent cell states. Additionally, we assess the efficiency of the previously proposed dummy cell program (DMP) in improving retention characteristics. Our results indicate that when the adjacent cell is in the erased state, the retention characteristics of the target cell are affected by conduction band <inline-formula> <tex-math notation="LaTeX">$(E_{C})$ </tex-math></inline-formula> variations due to trapped electrons. The concave structure shows the best retention characteristics, whereas the convex structure shows the most degradation. This difference becomes even more pronounced when the adjacent cell is in the programmed state. However, when DMP is applied to the convex structure, which exhibits the most degraded retention characteristics, the greatest improvement is observed due to significant changes in channel potential <inline-formula> <tex-math notation="LaTeX">$(V_{ch})$ </tex-math></inline-formula> caused by the fast-programming speed.https://ieeexplore.ieee.org/document/11082327/V-NANDchannel potentialdimpledown coupling phenomenonretention |
| spellingShingle | Seongwoo Kim Gunwook Yoon Seungjae Baik Myounggon Kang Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure IEEE Journal of the Electron Devices Society V-NAND channel potential dimple down coupling phenomenon retention |
| title | Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure |
| title_full | Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure |
| title_fullStr | Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure |
| title_full_unstemmed | Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure |
| title_short | Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure |
| title_sort | retention characteristics and dmp efficiency in v nand with dimple structure |
| topic | V-NAND channel potential dimple down coupling phenomenon retention |
| url | https://ieeexplore.ieee.org/document/11082327/ |
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