Capacitance of Film Structures Including Graphitic Carbon Nitride
Al/g-C3N4/Si/Al, Al/g-C3N4/SiO2/Si/Al, Al/g-C3N4/Al and Al/g-C3N4/Al2O3/Al structures were fabricated by rapid chemical vapor deposition of graphitic carbon nitride (g-C3N4) from melamine onto silicon (Si) and aluminum (Al) substrates partially coated with appropriate oxide – SiO2 or Al2O3 – and Al...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2024-12-01
|
| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/4017 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Al/g-C3N4/Si/Al, Al/g-C3N4/SiO2/Si/Al, Al/g-C3N4/Al and Al/g-C3N4/Al2O3/Al structures were fabricated by rapid chemical vapor deposition of graphitic carbon nitride (g-C3N4) from melamine onto silicon (Si) and aluminum (Al) substrates partially coated with appropriate oxide – SiO2 or Al2O3 – and Al contacts deposited on the surface. Their capacitance-voltage characteristics and frequency dependence of the capacitance were measured at room temperature. It was found that the permittivity of g-C3N4 is 14 in structures on silicon and 9–10 in structures on aluminum. The decrease in permittivity is explained by the formation of Al2O3 at the g-C3N4/Al boundary during the deposition of g-C3N4, as indicated by the results of the X-ray diffraction analysis of the formed samples. |
|---|---|
| ISSN: | 1729-7648 |