CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of...

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Bibliographic Details
Main Authors: V. А. Pilipenko, V. A. Saladukha, V. A. Filipenya, R. I. Vorobey, O. K. Gusev, A. L. Zharin, K. V. Pantsialeyeu, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky
Format: Article
Language:English
Published: Belarusian National Technical University 2017-12-01
Series:Приборы и методы измерений
Subjects:
silicon-silicon dioxide structure
thermal treatment
kelvin probe
c-v curve
interface charge
Online Access:https://pimi.bntu.by/jour/article/view/344
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