Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga<sub>2</sub>O<sub>3</sub> Films Using Post-Thermal Treatments
The metal-semiconductor-metal photodetectors based on the sputtered gallium oxide films on sapphire substrates after various post-thermal treatments have been investigated. The photodetector performance of the furnace-annealed gallium oxide sample degraded with the increase of annealing temperature...
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| Format: | Article |
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IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8877740/ |
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| author | Hui Li Po-Wei Chen Shuo-Huang Yuan Tsun-Min Huang Sam Zhang Dong-Sing Wuu |
| author_facet | Hui Li Po-Wei Chen Shuo-Huang Yuan Tsun-Min Huang Sam Zhang Dong-Sing Wuu |
| author_sort | Hui Li |
| collection | DOAJ |
| description | The metal-semiconductor-metal photodetectors based on the sputtered gallium oxide films on sapphire substrates after various post-thermal treatments have been investigated. The photodetector performance of the furnace-annealed gallium oxide sample degraded with the increase of annealing temperature from 700 to 1000 °C, resulting from the adverse effect of the aluminum cross-diffusion and polycrystalline formation. By rapid thermal annealing at 800 °C, the gallium oxide film can achieve an optimum photodetector performance with the photo/dark current ratio of 1.78 × 10<sup>5</sup> (@5V and 230 nm), responsivity of 0.553 A/W, and fast transient response (rise/fall time: 0.2 s/0.1 s). The result is comprehensively better than the previous reports by sputtering, which demonstrates that the quasi-single-crystalline gallium oxide film via rapid thermal process has high potential for deep-ultraviolet photodetector applications. |
| format | Article |
| id | doaj-art-7bb250cbb76342e5b1b1a2384a5bbbf8 |
| institution | Matheson Library |
| issn | 1943-0655 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-7bb250cbb76342e5b1b1a2384a5bbbf82025-07-01T23:48:25ZengIEEEIEEE Photonics Journal1943-06552019-01-011161810.1109/JPHOT.2019.29481938877740Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga<sub>2</sub>O<sub>3</sub> Films Using Post-Thermal TreatmentsHui Li0Po-Wei Chen1Shuo-Huang Yuan2Tsun-Min Huang3Sam Zhang4Dong-Sing Wuu5https://orcid.org/0000-0002-0314-8743Department of Materials Science and Engineering, National Chung Hsing University, Taichung, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung, TaiwanCentre for Advanced Thin Films and Devices, School of Materials and Energy, Southwest University, Chongqing, ChinaDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung, TaiwanThe metal-semiconductor-metal photodetectors based on the sputtered gallium oxide films on sapphire substrates after various post-thermal treatments have been investigated. The photodetector performance of the furnace-annealed gallium oxide sample degraded with the increase of annealing temperature from 700 to 1000 °C, resulting from the adverse effect of the aluminum cross-diffusion and polycrystalline formation. By rapid thermal annealing at 800 °C, the gallium oxide film can achieve an optimum photodetector performance with the photo/dark current ratio of 1.78 × 10<sup>5</sup> (@5V and 230 nm), responsivity of 0.553 A/W, and fast transient response (rise/fall time: 0.2 s/0.1 s). The result is comprehensively better than the previous reports by sputtering, which demonstrates that the quasi-single-crystalline gallium oxide film via rapid thermal process has high potential for deep-ultraviolet photodetector applications.https://ieeexplore.ieee.org/document/8877740/Gallium oxidephotodetectorpost thermal annealingquasi-single-crystallinediffusion. |
| spellingShingle | Hui Li Po-Wei Chen Shuo-Huang Yuan Tsun-Min Huang Sam Zhang Dong-Sing Wuu Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga<sub>2</sub>O<sub>3</sub> Films Using Post-Thermal Treatments IEEE Photonics Journal Gallium oxide photodetector post thermal annealing quasi-single-crystalline diffusion. |
| title | Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga<sub>2</sub>O<sub>3</sub> Films Using Post-Thermal Treatments |
| title_full | Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga<sub>2</sub>O<sub>3</sub> Films Using Post-Thermal Treatments |
| title_fullStr | Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga<sub>2</sub>O<sub>3</sub> Films Using Post-Thermal Treatments |
| title_full_unstemmed | Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga<sub>2</sub>O<sub>3</sub> Films Using Post-Thermal Treatments |
| title_short | Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga<sub>2</sub>O<sub>3</sub> Films Using Post-Thermal Treatments |
| title_sort | improved performance of deep ultraviolet photodetector from sputtered ga sub 2 sub o sub 3 sub films using post thermal treatments |
| topic | Gallium oxide photodetector post thermal annealing quasi-single-crystalline diffusion. |
| url | https://ieeexplore.ieee.org/document/8877740/ |
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