A 12 GHz low noise amplifier with high-gain
A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented to reduce the power consumption of the amplifie...
Saved in:
| Main Authors: | He Moxu, Hu Junjian, Gao Bo, He Liangjin |
|---|---|
| Format: | Article |
| Language: | Chinese |
| Published: |
National Computer System Engineering Research Institute of China
2022-04-01
|
| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000148334 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
A 2.5 GHz broadband balanced amplifier with gain margin and gain flatness tuning capability
by: Ali H. Ramadan
Published: (2025-09-01) -
EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES
by: Yana V. Ivanova, et al.
Published: (2018-10-01) -
Design and Simulation of a 12 GHz Two-Stage LNA for Ku-Band Telecommunication Applications
by: Ammar D. Fakhri, et al.
Published: (2025-06-01) -
19~21 GHz GaAs high linearity power amplifier MMIC
by: Liu Xiaoyu, et al.
Published: (2025-04-01) -
Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
by: A. V. Sapozhnikov, et al.
Published: (2025-07-01)