Study of Electrical and Optical Peaking of Si Ring Modulators for Tailoring Modulation Band
An operation scheme using electrical peaking and optical peaking to engineer the modulation band of a Si microring modulator is presented. By incorporating an inductor design at the metal traces of a Si microring modulator, the driving signal can be magnified near the peaking frequency. Although adj...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10130571/ |
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| Summary: | An operation scheme using electrical peaking and optical peaking to engineer the modulation band of a Si microring modulator is presented. By incorporating an inductor design at the metal traces of a Si microring modulator, the driving signal can be magnified near the peaking frequency. Although adjusting the wavelength detuning of a ring modulator also introduces optical peaking to extend the 3-dB roll-off frequency, using inductive peaking has no detrimental effect on the low-frequency response. By exploiting both effects, the modulation band can be tailored with more degrees of freedom. We accomplish a Si microring modulator design with a wide and flat transmission band over 95 GHz, which is potentially applied for a non-return-to-zero (NRZ) data transmission over 120 Gbit/s without extra signal post-compensation. |
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| ISSN: | 1943-0655 |