Design and Analysis of a Compact SOI-Based Aluminum/Highly Doped p-Type Silicon Hybrid Plasmonic Modulator
A silicon-based n-p-n-type hybrid plasmonic modulator operating at telecom wavelength of 1550 nm is theoretically investigated in this paper. The proposed modulator is dependent on the integration of a 1- <inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$</tex-math>...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7460882/ |
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| Summary: | A silicon-based n-p-n-type hybrid plasmonic modulator operating at telecom wavelength of 1550 nm is theoretically investigated in this paper. The proposed modulator is dependent on the integration of a 1- <inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$</tex-math></inline-formula>-long n-p-n-type Al/p-Si hybrid plasmonic waveguide with Si waveguides. It is demonstrated that when the p-type silicon is highly doped, it shows metal-like properties which can support the propagation of surface plasmon polariton waves. The simulation results show that the output power of TE (TM) mode decreases from −7.6 dB (−2.5 dB) to −31.5 dB (−7.5 dB) when the Al stack is 0.2 <inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$</tex-math></inline-formula> high and the carrier concentration in p-Si is set to be <inline-formula> <tex-math notation="LaTeX">$1\times 10^{21}\ \text{cm}^{-3}$</tex-math></inline-formula>, which is achieved with a voltage increase from 0 to 1.2 V. Such a plasmonic modulator not only depends on the propagation loss due to electroabsorption effect but takes advantage of the coupling loss raised by modal mismatch as well, which leads to a high modulation efficiency. |
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| ISSN: | 1943-0655 |