Electrochemical alumina technology for power electronics devices
The electrochemical alumina technology (ELAT) for the formation of heat-conducting aluminum substrates with a dielectric layer of anodic aluminum oxide with breakdown voltages above 6 kV is discussed. The developed technology can be used in the production of any electronic device operated in the tem...
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| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/1101 |
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| _version_ | 1839567839829164032 |
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| author | D. L. Shimanovich V. A. Yakovtseva |
| author_facet | D. L. Shimanovich V. A. Yakovtseva |
| author_sort | D. L. Shimanovich |
| collection | DOAJ |
| description | The electrochemical alumina technology (ELAT) for the formation of heat-conducting aluminum substrates with a dielectric layer of anodic aluminum oxide with breakdown voltages above 6 kV is discussed. The developed technology can be used in the production of any electronic device operated in the temperature range from 10 to 473 K and frequencies of the gigahertz range. |
| format | Article |
| id | doaj-art-5a9f1df410de42a9bb7f29e18e16cf13 |
| institution | Matheson Library |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-5a9f1df410de42a9bb7f29e18e16cf132025-08-04T17:38:19ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01035111100Electrochemical alumina technology for power electronics devicesD. L. Shimanovich0V. A. Yakovtseva1Belarusian state university of informatics and radioelectronicsBelarusian state university of informatics and radioelectronicsThe electrochemical alumina technology (ELAT) for the formation of heat-conducting aluminum substrates with a dielectric layer of anodic aluminum oxide with breakdown voltages above 6 kV is discussed. The developed technology can be used in the production of any electronic device operated in the temperature range from 10 to 473 K and frequencies of the gigahertz range.https://doklady.bsuir.by/jour/article/view/1101electrochemical alumina technologyheat-conducting basebreakdown voltage |
| spellingShingle | D. L. Shimanovich V. A. Yakovtseva Electrochemical alumina technology for power electronics devices Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki electrochemical alumina technology heat-conducting base breakdown voltage |
| title | Electrochemical alumina technology for power electronics devices |
| title_full | Electrochemical alumina technology for power electronics devices |
| title_fullStr | Electrochemical alumina technology for power electronics devices |
| title_full_unstemmed | Electrochemical alumina technology for power electronics devices |
| title_short | Electrochemical alumina technology for power electronics devices |
| title_sort | electrochemical alumina technology for power electronics devices |
| topic | electrochemical alumina technology heat-conducting base breakdown voltage |
| url | https://doklady.bsuir.by/jour/article/view/1101 |
| work_keys_str_mv | AT dlshimanovich electrochemicalaluminatechnologyforpowerelectronicsdevices AT vayakovtseva electrochemicalaluminatechnologyforpowerelectronicsdevices |