III-nitride memristors: materials, devices, and applications
Memristors, with their compactness, nonvolatile storage, and dynamic resistance modulation, are poised to revolutionize next-generation memory and neuromorphic computing paradigms. III-nitride materials, such as boron nitride (BN), gallium nitride (GaN), and aluminum nitride (AlN), exhibit exception...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Materials Futures |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2752-5724/ade5be |
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