Physically Transient Gelatin-Based Memristors of Buildable Logic Gates
Moore’s Law is being challenged, as the use of transistors has limitations in terms of physical materials, energy consumption, performance, and economics. To continue Moore’s Law, people have put forward many ideas, one of which is to find smaller devices to replace CMOS transistors. Memristor-based...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-06-01
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| Series: | Gels |
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| Online Access: | https://www.mdpi.com/2310-2861/11/6/428 |
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| author | Lu Wang Yuting Wang Wenhao Li Zhiqiang Gao Yutong Han Dianzhong Wen |
| author_facet | Lu Wang Yuting Wang Wenhao Li Zhiqiang Gao Yutong Han Dianzhong Wen |
| author_sort | Lu Wang |
| collection | DOAJ |
| description | Moore’s Law is being challenged, as the use of transistors has limitations in terms of physical materials, energy consumption, performance, and economics. To continue Moore’s Law, people have put forward many ideas, one of which is to find smaller devices to replace CMOS transistors. Memristor-based digital logic circuits open new avenues for exploring advanced computing architectures. In this paper, a biomemristor with the structure of Al/gelatin:Au NPs/Al/gelatin was fabricated using gelatin as the substrate and the host material of the dielectric layer. The device has a large switching current ratio, good stability, and physical transient characteristics. The device can be dissolved by soaking in deionized water for 5 min. In addition, the device successfully realizes the functions of NAND and NOR logic gates. It provides an effective method for research on green electronic devices with logic functions. |
| format | Article |
| id | doaj-art-4edf5cff79b74d7b94f54f7ec4a93c22 |
| institution | Matheson Library |
| issn | 2310-2861 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Gels |
| spelling | doaj-art-4edf5cff79b74d7b94f54f7ec4a93c222025-06-25T13:53:49ZengMDPI AGGels2310-28612025-06-0111642810.3390/gels11060428Physically Transient Gelatin-Based Memristors of Buildable Logic GatesLu Wang0Yuting Wang1Wenhao Li2Zhiqiang Gao3Yutong Han4Dianzhong Wen5School of Electronic Engineering, Heilongjiang University, Harbin 150080, ChinaSchool of Electronic Engineering, Heilongjiang University, Harbin 150080, ChinaSchool of Electronic Engineering, Heilongjiang University, Harbin 150080, ChinaSchool of Electronic Engineering, Heilongjiang University, Harbin 150080, ChinaSchool of Electronic Engineering, Heilongjiang University, Harbin 150080, ChinaSchool of Electronic Engineering, Heilongjiang University, Harbin 150080, ChinaMoore’s Law is being challenged, as the use of transistors has limitations in terms of physical materials, energy consumption, performance, and economics. To continue Moore’s Law, people have put forward many ideas, one of which is to find smaller devices to replace CMOS transistors. Memristor-based digital logic circuits open new avenues for exploring advanced computing architectures. In this paper, a biomemristor with the structure of Al/gelatin:Au NPs/Al/gelatin was fabricated using gelatin as the substrate and the host material of the dielectric layer. The device has a large switching current ratio, good stability, and physical transient characteristics. The device can be dissolved by soaking in deionized water for 5 min. In addition, the device successfully realizes the functions of NAND and NOR logic gates. It provides an effective method for research on green electronic devices with logic functions.https://www.mdpi.com/2310-2861/11/6/428gelatinAu NPsphysical transientNANDNOR |
| spellingShingle | Lu Wang Yuting Wang Wenhao Li Zhiqiang Gao Yutong Han Dianzhong Wen Physically Transient Gelatin-Based Memristors of Buildable Logic Gates Gels gelatin Au NPs physical transient NAND NOR |
| title | Physically Transient Gelatin-Based Memristors of Buildable Logic Gates |
| title_full | Physically Transient Gelatin-Based Memristors of Buildable Logic Gates |
| title_fullStr | Physically Transient Gelatin-Based Memristors of Buildable Logic Gates |
| title_full_unstemmed | Physically Transient Gelatin-Based Memristors of Buildable Logic Gates |
| title_short | Physically Transient Gelatin-Based Memristors of Buildable Logic Gates |
| title_sort | physically transient gelatin based memristors of buildable logic gates |
| topic | gelatin Au NPs physical transient NAND NOR |
| url | https://www.mdpi.com/2310-2861/11/6/428 |
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