The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement

The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement

We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited ph...

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Bibliographic Details
Main Authors: Fulong Jiang, Yaying Liu, Menghan Liu, Ningze Zhuo, Peng Gao, Huajie Fang, Peng Chen, Bin Liu, Xiangqian Xiu, Zili Xie, Ping Han, Yi Shi, Rong Zhang, Youdou Zheng
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
InGaN
Multiple Quantum Wells
polarization
efficiency droop.
Online Access:https://ieeexplore.ieee.org/document/8327824/
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Summary:We have fabricated the InGaN&#x002F;AlGaInN multiple quantum wells with lattice-matched AlGaN&#x002F;InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited photoluminescence measurement is performed by Ti-sapphire pulse laser with the maximal carrier density of 10<sup>20</sup> cm<sup>&#x2212;3</sup>. Under such high carrier density, the conventional InGaN&#x002F;GaN MQWs (C-MQWs) have an additional nonradiative loss of carriers and suffer from the efficiency droop effect, while slight droop behavior is observed in the SL-MQWs sample. The results show that the substitution of AlGaN&#x002F;InGaN superlattices as quantum barriers can effectively suppress the droop behavior at highly excited condition.
ISSN:1943-0655

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