STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL

STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL

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The matter of the study is application of contact potential difference and band bending visualization technique based on Kelvin–Ziesman technique to the non-destructive testing and defects study of a silicon-insulator structure. Experiments were held using a thermally oxidized boron-doped silicon wa...

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Bibliographic Details
Main Authors: R. I. Vorobey, O. K. Gusev, A. L. Zharin, A. N. Petlitsky, V. A. Pilipenko, A. S. Turtsevitch, A. K. Tyavlovsky, K. L. Tyavlovsky
Format: Article
Language:English
Published: Belarusian National Technical University 2015-03-01
Series:Приборы и методы измерений
Subjects:
surface potential
kelvin–ziesman technique
silicon-insulator structure
non-destructive testing
semiconductor wafer defects
Online Access:https://pimi.bntu.by/jour/article/view/42
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