Submicrometer Epsilon-Near-Zero Electroabsorption Modulators Enabled by High-Mobility Cadmium Oxide
Epsilon-near-zero materials provide a new path for tailoring light–matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The nonresonant modulator operates through...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7970105/ |
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| Summary: | Epsilon-near-zero materials provide a new path for tailoring light–matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The nonresonant modulator operates through field-effect carrier density tuning. We compare the performance of modulators composed of two different conducting oxides, namely, indium oxide (In<sub>2</sub>O<sub>3 </sub>) and cadmium oxide (CdO), and show that better modulation performance is achieved when using high-mobility (i.e., low loss) epsilon-near-zero materials such as CdO. In particular, we show that nonresonant electroabsorption modulators with submicron lengths and greater than 5 dB extinction ratios may be achieved through the proper selection of high-mobility transparent conducting oxides, opening a path for device miniaturization and increased modulation depth. |
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| ISSN: | 1943-0655 |