Interpretation of the piezoelectric photothermal spectra of p-type silicon samples
This paper presents both experimental and theoretical amplitude and phase piezoelectric photothermal spectra (PPTS) of p-type silicon samples. two dominant peaks at 1.07 eV and 1.18 eV were observed in PPT spectra at room temperature. The relative intensities of these peaks change by...
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| Format: | Article |
| Language: | English |
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Institute of Fundamental Technological Research Polish Academy of Sciences
2003-01-01
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| Series: | Archives of Acoustics |
| Online Access: | https://acoustics.ippt.pan.pl/index.php/aa/article/view/452 |
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| _version_ | 1839628269995950080 |
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| author | M. Maliński A. Memon T. Ikari |
| author_facet | M. Maliński A. Memon T. Ikari |
| author_sort | M. Maliński |
| collection | DOAJ |
| description | This paper presents both experimental and theoretical
amplitude and phase piezoelectric photothermal spectra (PPTS) of p-type silicon
samples. two dominant peaks at 1.07 eV and 1.18 eV were observed in PPT spectra
at room temperature. The relative intensities of these peaks change by a surface
treatment. Numerical analysis is performed by supposing that an inactive layer
exists at the sample surface. The characteristic structure observed in the
piezoelectric amplitude spectra of p-Si samples is well explained by the model
proposed for multilayer structure. We found that the proposed inactive layer
model is quite helpful in investigating the surface properties of a
semiconductor material. |
| format | Article |
| id | doaj-art-47d5e06bfce24a1bbdfb8b9e9eba98a1 |
| institution | Matheson Library |
| issn | 0137-5075 2300-262X |
| language | English |
| publishDate | 2003-01-01 |
| publisher | Institute of Fundamental Technological Research Polish Academy of Sciences |
| record_format | Article |
| series | Archives of Acoustics |
| spelling | doaj-art-47d5e06bfce24a1bbdfb8b9e9eba98a12025-07-15T16:56:18ZengInstitute of Fundamental Technological Research Polish Academy of SciencesArchives of Acoustics0137-50752300-262X2003-01-01282Interpretation of the piezoelectric photothermal spectra of p-type silicon samplesM. Maliński0A. Memon1T. Ikari2Faculty of Electronics, Technical University of Koszalin PartyzantówFaculty of Electronics, Technical University of Koszalin PartyzantówDepartment of Electrical and Electronic EngineeringThis paper presents both experimental and theoretical amplitude and phase piezoelectric photothermal spectra (PPTS) of p-type silicon samples. two dominant peaks at 1.07 eV and 1.18 eV were observed in PPT spectra at room temperature. The relative intensities of these peaks change by a surface treatment. Numerical analysis is performed by supposing that an inactive layer exists at the sample surface. The characteristic structure observed in the piezoelectric amplitude spectra of p-Si samples is well explained by the model proposed for multilayer structure. We found that the proposed inactive layer model is quite helpful in investigating the surface properties of a semiconductor material. https://acoustics.ippt.pan.pl/index.php/aa/article/view/452 |
| spellingShingle | M. Maliński A. Memon T. Ikari Interpretation of the piezoelectric photothermal spectra of p-type silicon samples Archives of Acoustics |
| title | Interpretation of the piezoelectric photothermal spectra of p-type silicon samples |
| title_full | Interpretation of the piezoelectric photothermal spectra of p-type silicon samples |
| title_fullStr | Interpretation of the piezoelectric photothermal spectra of p-type silicon samples |
| title_full_unstemmed | Interpretation of the piezoelectric photothermal spectra of p-type silicon samples |
| title_short | Interpretation of the piezoelectric photothermal spectra of p-type silicon samples |
| title_sort | interpretation of the piezoelectric photothermal spectra of p type silicon samples |
| url | https://acoustics.ippt.pan.pl/index.php/aa/article/view/452 |
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