Effect of Rapid Thermal Annealing Temperature on the Electrophysical Properties of the Ohmic Contact of Ti/Al/Ni Metallization to the GaN/AlGaN Heterostructure

Effect of Rapid Thermal Annealing Temperature on the Electrophysical Properties of the Ohmic Contact of Ti/Al/Ni Metallization to the GaN/AlGaN Heterostructure

Effect of rapid thermal annealing temperature on the electrophysical properties of the ohmic contact of Ti/Al/Ni metallization with layer thicknesses of 20/120/40 nm to the GaN/AlGaN heterostructure with a two-dimensional electron gas on a sapphire substrate has been discovered by transmission line...

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Bibliographic Details
Main Authors: A. D. Yunik, J. A. Solovjov, D. V. Zhyhulin
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2022-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
gallium nitride
heterostructure
two-dimensional electron gas
ohmic contact
rapid thermal annealing
Online Access:https://doklady.bsuir.by/jour/article/view/3362
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