APA (7th ed.) Citation

Yunik, A. D., Solovjov, J. A., & Zhyhulin, D. V. (2022). Effect of Rapid Thermal Annealing Temperature on the Electrophysical Properties of the Ohmic Contact of Ti/Al/Ni Metallization to the GaN/AlGaN Heterostructure. Educational institution «Belarusian State University of Informatics and Radioelectronics».

Chicago Style (17th ed.) Citation

Yunik, A. D., J. A. Solovjov, and D. V. Zhyhulin. Effect of Rapid Thermal Annealing Temperature on the Electrophysical Properties of the Ohmic Contact of Ti/Al/Ni Metallization to the GaN/AlGaN Heterostructure. Educational institution «Belarusian State University of Informatics and Radioelectronics», 2022.

MLA (9th ed.) Citation

Yunik, A. D., et al. Effect of Rapid Thermal Annealing Temperature on the Electrophysical Properties of the Ohmic Contact of Ti/Al/Ni Metallization to the GaN/AlGaN Heterostructure. Educational institution «Belarusian State University of Informatics and Radioelectronics», 2022.