GaN-Based Generic Bifunction LED for Potential Duplex Free-Space VLCs
A generic bifunction GaN light-emitting diode (LED) structure, which has a 300 nm <italic>n<sup>+</sup> -ZnO</italic> epitaxial layer grown on a standard GaN LED epistack and a mesa size of <inline-formula> <tex-math notation="LaTeX"&g...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7995022/ |
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| Summary: | A generic bifunction GaN light-emitting diode (LED) structure, which has a 300 nm <italic>n<sup>+</sup> -ZnO</italic> epitaxial layer grown on a standard GaN LED epistack and a mesa size of <inline-formula> <tex-math notation="LaTeX">$200\, \mathrm{\mu} {\rm{m\, \times \, 600\, }}\mathrm{\mu} {\rm{m}}$</tex-math> </inline-formula>, exhibits a peak responsivity of 450 mA/W to purple lights (380–400 nm) under zero bias and a narrow bandpass of around 60 nm. The corresponding product of quantum efficiency and gain is estimated as 140%. The purple light (380–400 nm) to blue light (>460 nm) rejection ratio can reach two orders of magnitude. The generic bifunction LED does not sacrifice its optical and modulation performances as a light transmitter. The optical power reaches 100 mW with a peak wavelength around 447 nm. A new proposition for duplex free-space visible light communications is depicted. |
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| ISSN: | 1943-0655 |