QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS
There were investigated the capacity-voltage characteristics of the MOS transistors, fabricated by the similar process charts, with the identical applied technological materials), however at various time (appropriately further in the text series A and series B). It was shown, that the measurements o...
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Main Authors: | V. B. Odzhaev, A. N. Pyatlitski, V. S. Prosolovich, V. A. Filipenya, S. V. Shvedau, V. V. Chernyi, V. Yu. Yavid, Yu. N. Yankouski |
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Format: | Article |
Language: | English |
Published: |
Belarusian National Technical University
2015-08-01
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Series: | Приборы и методы измерений |
Subjects: | |
Online Access: | https://pimi.bntu.by/jour/article/view/211 |
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