SVETOTRANZISTOR
In this article the opportunity to form a pn-junction bipolar transistor as a light-emitting, which will increase the degree of integration of large scale integrated circuits by reducing heat gain.
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Dagestan State Technical University
2016-07-01
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| Series: | Вестник Дагестанского государственного технического университета: Технические науки |
| Subjects: | |
| Online Access: | https://vestnik.dgtu.ru/jour/article/view/21 |
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