Electrical Tunability in 3-Gated Reconfigurable Transistor for Analog/RF Applications
The potential of electrical tunability in a 3-gated (3G) Reconfigurable Field Effect Transistor (RFET) for analog/RF applications is investigated through four distinct configurations (R<inline-formula> <tex-math notation="LaTeX">${}_{\text {2-IG-LVT}}$ </tex-math></inl...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11045726/ |
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