Electrical Tunability in 3-Gated Reconfigurable Transistor for Analog/RF Applications
The potential of electrical tunability in a 3-gated (3G) Reconfigurable Field Effect Transistor (RFET) for analog/RF applications is investigated through four distinct configurations (R<inline-formula> <tex-math notation="LaTeX">${}_{\text {2-IG-LVT}}$ </tex-math></inl...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11045726/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|