APA (7th ed.) Citation

Volchek, V. S., Dao, D. H., Lovshenko, I. Y., & Stempitsky, V. R. (2019). CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS. Educational institution «Belarusian State University of Informatics and Radioelectronics».

Chicago Style (17th ed.) Citation

Volchek, V. S., D. HA Dao, I. Yu Lovshenko, and V. R. Stempitsky. CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS. Educational institution «Belarusian State University of Informatics and Radioelectronics», 2019.

MLA (9th ed.) Citation

Volchek, V. S., et al. CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS. Educational institution «Belarusian State University of Informatics and Radioelectronics», 2019.