The influence of hole states on the electronic and electrostatic properties of 2D layers based on the silicon-germaniumsilicon heterostructure
The performance of a hole qubit in the Si/Ge/Si heterostructure is considered in this work. For this purpose, a quantum mechanical study using density functional theory and the pseudopotential method has been carried out. The zone structure and density of electronic states were constructed for the e...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Peter the Great St.Petersburg Polytechnic University
2025-06-01
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| Series: | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| Subjects: | |
| Online Access: | https://physmath.spbstu.ru/article/2025.80.02/ |
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