High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements
Organic nonvolatile transistor memories (ONVMs) using a hybrid spiro [fluorene-9,7′-dibenzo [c, h] acridine]-5′-one (SFDBAO)/polystyrene (PS) film as bulk-heterojunction-like tunneling and trapping elements were fabricated. From the characterization of the 10% SFDBAO/PS based on ONVM, a sterically h...
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-07-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/14/1072 |
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| Summary: | Organic nonvolatile transistor memories (ONVMs) using a hybrid spiro [fluorene-9,7′-dibenzo [c, h] acridine]-5′-one (SFDBAO)/polystyrene (PS) film as bulk-heterojunction-like tunneling and trapping elements were fabricated. From the characterization of the 10% SFDBAO/PS based on ONVM, a sterically hindered small-molecule SFDBAO with rigid orthogonal configuration and a donor–acceptor (D-A) structure as a molecular-scale charge storage element demonstrated significantly higher charge trapping ability than other small-molecule materials such as C<sub>60</sub> and Alq<sub>3</sub>. The ONVM based on 10% SFDBAO/PS presents ambipolar memory behaviors with a wide memory window (146 V), a fast-switching speed (20 ms), an excellent retention time (over 5 × 10<sup>4</sup> s), and stable reversibility (36 cycles without any noticeable decay). By applying different gate voltages, the above ONVM shows reliable four-level data storage characteristics. The investigation demonstrates that the strategical bulk-heterojunction-like tunneling and trapping elements composed of small-molecule materials and polymers exhibit promising potential for high-performance ambipolar ONVMs. |
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| ISSN: | 2079-4991 |