Optimizing Crystalline MoS<sub>2</sub> Growth on Technologically Relevant Platinum Substrates Using Ionized Jet Deposition: Interface Interactions and Structural Insights

Optimizing Crystalline MoS<sub>2</sub> Growth on Technologically Relevant Platinum Substrates Using Ionized Jet Deposition: Interface Interactions and Structural Insights

Transition metal dichalcogenides, especially molybdenum disulfide (MoS<sub>2</sub>), exhibit exceptional properties that make them suitable for a wide range of applications. However, the interaction between MoS<sub>2</sub> and technologically relevant substrates, such as plat...

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Main Authors: Cristian Tomasi Cebotari, Christos Gatsios, Andrea Pedrielli, Lucia Nasi, Francesca Rossi, Andrea Chiappini, Riccardo Ceccato, Roberto Verucchi, Marco V. Nardi, Melanie Timpel
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Surfaces
Subjects:
transition metal dichalcogenides
platinum
ionized jet deposition
interface
photoelectron spectroscopy
electronic properties
Online Access:https://www.mdpi.com/2571-9637/8/2/38
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Summary:Transition metal dichalcogenides, especially molybdenum disulfide (MoS<sub>2</sub>), exhibit exceptional properties that make them suitable for a wide range of applications. However, the interaction between MoS<sub>2</sub> and technologically relevant substrates, such as platinum (Pt) electrodes, can significantly influence its properties. This study investigates the growth and properties of MoS<sub>2</sub> thin films on Pt substrates using ionized jet deposition, a versatile, low-cost vacuum deposition technique. We explore the effects of the roughness of Pt substrates and self-heating during deposition on the chemical composition, structure, and strain of MoS<sub>2</sub> films. By optimizing the deposition system to achieve crystalline MoS<sub>2</sub> at room temperature, we compare as-deposited and annealed films. The results reveal that as-deposited MoS<sub>2</sub> films are initially amorphous and conform to the Pt substrate roughness, but crystalline growth is reached when the sample holder is sufficiently heated by the plasma. Further post-annealing at 270 °C enhances crystallinity and reduces sulfur-related defects. We also identify a change in the MoS<sub>2</sub>–Pt interface properties, with a reduction in Pt–S interactions after annealing. Our findings contribute to the understanding of MoS<sub>2</sub> growth on Pt and provide insights for optimizing MoS<sub>2</sub>-based devices in catalysis and electronics.
ISSN:2571-9637

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