Inverse Scattering Method Design of Regrowth-Free Single-Mode Semiconductor Lasers Using Pit Perturbations for Monolithic Integration
An inverse scattering method is used to design regrowth-free single-mode lasers, using etch depth insensitive pits as perturbations in the laser cavity. These pit perturbations are circular holes etched into the waveguide of each laser to a depth 0.8<inline-formula><tex-math notation="...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8477050/ |
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