Electron properties investigation of the near-surface region in crystalline semiconductors using the transverse acoustoelectric effect
The paper presents the acoustoelectric phenomenon in a layered structure: piezoelectric waveguide – semiconductor. The publication presents an original acoustic method for determining the electrical and electron parameters of the subsurface area in crystalline semiconductors. The method is based on...
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Institute of Fundamental Technological Research Polish Academy of Sciences
2022-12-01
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| Series: | Archives of Acoustics |
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| Online Access: | https://journals.pan.pl/Content/125262/PDF/aoa.2022.142903.pdf |
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| author | Tadeusz Pustelny |
| author_facet | Tadeusz Pustelny |
| author_sort | Tadeusz Pustelny |
| collection | DOAJ |
| description | The paper presents the acoustoelectric phenomenon in a layered structure: piezoelectric waveguide – semiconductor. The publication presents an original acoustic method for determining the electrical and electron parameters of the subsurface area in crystalline semiconductors. The method is based on the so-called transverse acoustoelectric effect realized in a layer system: piezoelectric waveguide with Rayleigh surface acoustic wave – semiconductor. The paper discusses the physical foundations of the transverse acoustoelectric effect in the piezoelectric – semiconductor layer system, taking into account the distinctness of the physical properties of the semiconductor near-surface region in relation to its volumetric properties. The work covers many experimental studies of the near-surface region of semiconductors. The original method was presented to determine such surface parameters as: surface potential, surface conductivity, mobility of carriers in the subsurface area, life time of charge carriers in surface states. By means of the acoustic method the following semiconductors have been extensively tested: indium phosphide InP and gallium phosphide GaP. These semiconductors are one of the main semiconductors of group III-V, which are the basis of modern photonics, optoelectronics as well as integrated optics. The work also includes an analysis of the measurement possibilities of the developed acoustic method and its limitations, as well as an analysis of the accuracy of the obtained values of the parameters of the subsurface area of crystalline semiconductors. |
| format | Article |
| id | doaj-art-2ec51a23a9164fb4a67fb288978aa3d2 |
| institution | Matheson Library |
| issn | 0137-5075 2300-262X |
| language | English |
| publishDate | 2022-12-01 |
| publisher | Institute of Fundamental Technological Research Polish Academy of Sciences |
| record_format | Article |
| series | Archives of Acoustics |
| spelling | doaj-art-2ec51a23a9164fb4a67fb288978aa3d22025-08-02T04:28:10ZengInstitute of Fundamental Technological Research Polish Academy of SciencesArchives of Acoustics0137-50752300-262X2022-12-01vol. 47No 4565579https://doi.org/10.24425/aoa.2022.142903Electron properties investigation of the near-surface region in crystalline semiconductors using the transverse acoustoelectric effectTadeusz Pustelny0Department of Optoelectronics, Silesian University of Technology, Gliwice, PolandThe paper presents the acoustoelectric phenomenon in a layered structure: piezoelectric waveguide – semiconductor. The publication presents an original acoustic method for determining the electrical and electron parameters of the subsurface area in crystalline semiconductors. The method is based on the so-called transverse acoustoelectric effect realized in a layer system: piezoelectric waveguide with Rayleigh surface acoustic wave – semiconductor. The paper discusses the physical foundations of the transverse acoustoelectric effect in the piezoelectric – semiconductor layer system, taking into account the distinctness of the physical properties of the semiconductor near-surface region in relation to its volumetric properties. The work covers many experimental studies of the near-surface region of semiconductors. The original method was presented to determine such surface parameters as: surface potential, surface conductivity, mobility of carriers in the subsurface area, life time of charge carriers in surface states. By means of the acoustic method the following semiconductors have been extensively tested: indium phosphide InP and gallium phosphide GaP. These semiconductors are one of the main semiconductors of group III-V, which are the basis of modern photonics, optoelectronics as well as integrated optics. The work also includes an analysis of the measurement possibilities of the developed acoustic method and its limitations, as well as an analysis of the accuracy of the obtained values of the parameters of the subsurface area of crystalline semiconductors.https://journals.pan.pl/Content/125262/PDF/aoa.2022.142903.pdfsurface acoustic waveacoustoelectric effectselectron properties of semiconductors |
| spellingShingle | Tadeusz Pustelny Electron properties investigation of the near-surface region in crystalline semiconductors using the transverse acoustoelectric effect Archives of Acoustics surface acoustic wave acoustoelectric effects electron properties of semiconductors |
| title | Electron properties investigation of the near-surface region in crystalline semiconductors using the transverse acoustoelectric effect |
| title_full | Electron properties investigation of the near-surface region in crystalline semiconductors using the transverse acoustoelectric effect |
| title_fullStr | Electron properties investigation of the near-surface region in crystalline semiconductors using the transverse acoustoelectric effect |
| title_full_unstemmed | Electron properties investigation of the near-surface region in crystalline semiconductors using the transverse acoustoelectric effect |
| title_short | Electron properties investigation of the near-surface region in crystalline semiconductors using the transverse acoustoelectric effect |
| title_sort | electron properties investigation of the near surface region in crystalline semiconductors using the transverse acoustoelectric effect |
| topic | surface acoustic wave acoustoelectric effects electron properties of semiconductors |
| url | https://journals.pan.pl/Content/125262/PDF/aoa.2022.142903.pdf |
| work_keys_str_mv | AT tadeuszpustelny electronpropertiesinvestigationofthenearsurfaceregionincrystallinesemiconductorsusingthetransverseacoustoelectriceffect |