APA (7th ed.) Citation

Zhiyuan, N., Lin, B., Gang, L., Cheng, B., & Junyun, Z. (2025). Study on ESD characteristics of T-shape gate GaN HEMT microwave devices. National Computer System Engineering Research Institute of China.

Chicago Style (17th ed.) Citation

Zhiyuan, Ni, Bai Lin, Ling Gang, Bao Cheng, and Zhang Junyun. Study on ESD Characteristics of T-shape Gate GaN HEMT Microwave Devices. National Computer System Engineering Research Institute of China, 2025.

MLA (9th ed.) Citation

Zhiyuan, Ni, et al. Study on ESD Characteristics of T-shape Gate GaN HEMT Microwave Devices. National Computer System Engineering Research Institute of China, 2025.