Development of a Highly Reliable PbS QDs-Based SWIR Photodetector Based on Metal Oxide Electron/Hole Extraction Layer Formation Conditions
Recently, with the development of automation technology in various fields, much research has been conducted on infrared photodetectors, which are the core technology of LiDAR sensors. However, most infrared photodetectors are expensive because they use compound semiconductors based on epitaxial proc...
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MDPI AG
2025-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/15/14/1107 |
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| author | JinBeom Kwon Yuntae Ha Suji Choi Donggeon Jung |
| author_facet | JinBeom Kwon Yuntae Ha Suji Choi Donggeon Jung |
| author_sort | JinBeom Kwon |
| collection | DOAJ |
| description | Recently, with the development of automation technology in various fields, much research has been conducted on infrared photodetectors, which are the core technology of LiDAR sensors. However, most infrared photodetectors are expensive because they use compound semiconductors based on epitaxial processes, and they have low safety because they use the near-infrared (NIR) region that can damage the retina. Therefore, they are difficult to apply to automation technologies such as automobiles and factories where humans can be constantly exposed. In contrast, short-wavelength infrared photodetectors based on PbS QDs are actively being developed because they can absorb infrared rays in the eye-safe region by controlling the particle size of QDs and can be easily and inexpensively manufactured through a solution process. However, PbS QDs-based SWIR photodetectors have low chemical stability due to the electron/hole extraction layer processed by the solution process, making it difficult to manufacture them in the form of patterning and arrays. In this study, bulk NiO and ZnO were deposited by sputtering to achieve uniformity and patterning of thin films, and the performance of PbS QDs-based photodetectors was improved by optimizing the thickness and annealing conditions of the thin films. The fabricated photodetector achieved a high response characteristic of 114.3% through optimized band gap and improved transmittance characteristics. |
| format | Article |
| id | doaj-art-2575b51de15c4d13bc055301672b8ca1 |
| institution | Matheson Library |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | MDPI AG |
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| series | Nanomaterials |
| spelling | doaj-art-2575b51de15c4d13bc055301672b8ca12025-07-25T13:32:21ZengMDPI AGNanomaterials2079-49912025-07-011514110710.3390/nano15141107Development of a Highly Reliable PbS QDs-Based SWIR Photodetector Based on Metal Oxide Electron/Hole Extraction Layer Formation ConditionsJinBeom Kwon0Yuntae Ha1Suji Choi2Donggeon Jung3Advanced Mobility System Group, Korea Institute of Industrial Technology (KITECH), Daegu 42994, Republic of KoreaAdvanced Mobility System Group, Korea Institute of Industrial Technology (KITECH), Daegu 42994, Republic of KoreaAdvanced Mobility System Group, Korea Institute of Industrial Technology (KITECH), Daegu 42994, Republic of KoreaAdvanced Mobility System Group, Korea Institute of Industrial Technology (KITECH), Daegu 42994, Republic of KoreaRecently, with the development of automation technology in various fields, much research has been conducted on infrared photodetectors, which are the core technology of LiDAR sensors. However, most infrared photodetectors are expensive because they use compound semiconductors based on epitaxial processes, and they have low safety because they use the near-infrared (NIR) region that can damage the retina. Therefore, they are difficult to apply to automation technologies such as automobiles and factories where humans can be constantly exposed. In contrast, short-wavelength infrared photodetectors based on PbS QDs are actively being developed because they can absorb infrared rays in the eye-safe region by controlling the particle size of QDs and can be easily and inexpensively manufactured through a solution process. However, PbS QDs-based SWIR photodetectors have low chemical stability due to the electron/hole extraction layer processed by the solution process, making it difficult to manufacture them in the form of patterning and arrays. In this study, bulk NiO and ZnO were deposited by sputtering to achieve uniformity and patterning of thin films, and the performance of PbS QDs-based photodetectors was improved by optimizing the thickness and annealing conditions of the thin films. The fabricated photodetector achieved a high response characteristic of 114.3% through optimized band gap and improved transmittance characteristics.https://www.mdpi.com/2079-4991/15/14/1107quantum dotsPbSSWIRLiDAR sensor |
| spellingShingle | JinBeom Kwon Yuntae Ha Suji Choi Donggeon Jung Development of a Highly Reliable PbS QDs-Based SWIR Photodetector Based on Metal Oxide Electron/Hole Extraction Layer Formation Conditions Nanomaterials quantum dots PbS SWIR LiDAR sensor |
| title | Development of a Highly Reliable PbS QDs-Based SWIR Photodetector Based on Metal Oxide Electron/Hole Extraction Layer Formation Conditions |
| title_full | Development of a Highly Reliable PbS QDs-Based SWIR Photodetector Based on Metal Oxide Electron/Hole Extraction Layer Formation Conditions |
| title_fullStr | Development of a Highly Reliable PbS QDs-Based SWIR Photodetector Based on Metal Oxide Electron/Hole Extraction Layer Formation Conditions |
| title_full_unstemmed | Development of a Highly Reliable PbS QDs-Based SWIR Photodetector Based on Metal Oxide Electron/Hole Extraction Layer Formation Conditions |
| title_short | Development of a Highly Reliable PbS QDs-Based SWIR Photodetector Based on Metal Oxide Electron/Hole Extraction Layer Formation Conditions |
| title_sort | development of a highly reliable pbs qds based swir photodetector based on metal oxide electron hole extraction layer formation conditions |
| topic | quantum dots PbS SWIR LiDAR sensor |
| url | https://www.mdpi.com/2079-4991/15/14/1107 |
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