Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer
AlGaN-based ultraviolet-A light-emitting diodes (UVA LEDs) inevitably suffer from current crowding effects at high injection levels due to their lateral device structure, resulting in non-uniform light emission and device overheating. In N-polar UV LEDs, the problem is further exacerbated by increas...
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Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2023-01-01
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Series: | IEEE Photonics Journal |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10138550/ |
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