GaN Power Amplifier with DPD for Enhanced Spectral Integrity in 2.3–2.5 GHz Wireless Systems
The increasing need for high-data-rate wireless applications in 5G and IoT networks requires sophisticated power amplifier (PA) designs in the sub-6 GHz spectrum. This work introduces a high-efficiency Gallium Nitride (GaN)-based power amplifier optimized for the 2.3–2.5 GHz frequency band, using di...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-07-01
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| Series: | Technologies |
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| Online Access: | https://www.mdpi.com/2227-7080/13/7/299 |
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| Summary: | The increasing need for high-data-rate wireless applications in 5G and IoT networks requires sophisticated power amplifier (PA) designs in the sub-6 GHz spectrum. This work introduces a high-efficiency Gallium Nitride (GaN)-based power amplifier optimized for the 2.3–2.5 GHz frequency band, using digital pre-distortion (DPD) to improve spectral fidelity and reduce distortion. The design employs load modulation and dynamic biasing to optimize power-added efficiency (PAE) and linearity. Simulation findings indicate a gain of 13 dB, a 3 dB compression point at 29.7 dBm input power, and 40 dBm output power, with a power-added efficiency of 60% and a drain efficiency of 65%. The power amplifier achieves a return loss of more than 15 dB throughout the frequency spectrum, ensuring robust impedance matching and consistent performance. Electromagnetic co-simulations confirm its stability under high-frequency settings, rendering it appropriate for next-generation high-efficiency wireless communication systems. |
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| ISSN: | 2227-7080 |